IXI859S1 IXYS

IXI858 / IXI859 IXYS Gate Driver with VReg and Charge Pump Regulator Features: General Description The IXI858 and IXI859 combine a power MOSFET Logic Level Gate Drive Compatible driver, linear voltage regulator, and charge pump 60mA Source / 120mA Sink Minimum regulator for power supply generation in a single Gate Drive SOIC-8 package. The IXI858 features a 5.0V linear voltage regulator, and the IXI859 a 3.3V linear 5.0V or 3.3V Voltage Regulator voltage regulator. These three power functions Charge Pump Regulator Stabilizes V CC combined on the IXI858/859 target micro-controller Power Supply at 13V based off-line applications. UVLO Protection The IXI858 and IXI859 are designed to operate over a temperature range of -25C to +125C, and are Applications: available in an 8 lead SOIC package. Controller based off-line applications Power Supply and Power Management ORDERING INFORMATION Lighting Control Part No. Description Pack Quantity IXI858S1 100 (Tube) 5.0V Version IXI858S1T/R 2500 (Tape & Reel) IXI859S1 100 (Tube) 3.3V Version IXI859S1T/R 2500 (Tape & Reel) Functional Block Diagram SOIC-8 Lead Configuration VCC VCAP 1 8 VCC 1 8 VCAP Vclamp VOUT 2 7 VSUP Vreg UVLO VSUP N/C 3 6 GND 7 2 + IN 4 5 GATE VOUT GND - ChrgPReg 6 13V 8 - Lead SOIC 4 75k GATE IN 5 Copyright IXYS CORPORATION 2005 1 4/29/05 IXI858 / IXI859 IXYS SOIC-8 Pin Description Pin No. Pin Symbol I/O Description Power input connects to a rectified high voltage source through a 1 VCC Supply current limiting series resistor and filter capacitor to ground. Regulated 13 volt output when the charge pump is active. 2 VOUT Output Linear Regulator Output (IXI858 = 5.0V, IXI859 = 3.3V) 3 N/C No Connect 4 IN Input Gate Driver Input 5 GATE Output Gate Driver Output. Drives external power MOSFET. 6 GND Ground Ground Return Charge Pump Switch Input. Enables / disables the charge pump 7 VSUP I/O output. Requires a low ESR capacitor. Charge Pump Switch Output. Rectified charge pump output. 8 VCAP I/O Requires a low ESR capacitor. Absolute Maximum Ratings Symbol Parameter Min Max Units V DC Supply Voltage -0.4 +20.0 V CC V Logic System Supply Voltage -0.4 +6.0 V OUT V Gate Input Voltage -0.4 +6.0 V IN I Continuous current into V pin -200 +200 mA SUP SUP I Peak Current into V -1 +1 A PEAK SUP P Power Dissipation 500 mW D o T Maximum Junction Temperature +150 C J o T Storage Temperature -65 +150 C STG Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied. Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and affect its reliability. ESD Warning ESD (electrostatic discharge) sensitive device. Although the IXI858 / IXI859 feature proprietary ESD protection circuitry, permanent damage may be sustained if subjected to high energy electrostatic discharges. Proper ESD precautions are recommended to avoid performance degradation or loss of functionality. www.ixys.com 2 4/29/05