15 A Low-Side RF MOSFET Driver IXRFDSM607X2 Description The IXRFDSM607X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFDSM607X2 can source and sink 7 A of peak cur- rent per driver, 15 A when combined, while producing Features voltage rise and fall times of less than 5 ns and mini- mum pulse widths of 8 ns. The inputs of the driver are High Peak Output Current compatible with TTL or CMOS and are fully immune to Low Output Impedance latch up over the entire operating range. Designed Low Quiescent Supply Current with small internal delays, cross conduction or current Low Propagation Delay shoot-through is virtually eliminated. The features and High Capacitive Load Drive Capability wide safety margin in operating voltage and power Wide Operating Voltage Range make the IXRFDSM607X2 unmatched in performance Single or Dual Driver Operation Capable and value. Applications The surface mount IXRFDSM607X2 is packaged in a low-inductance surface mount package incorporating advanced layout techniques to minimize stray lead in- RF MOSFET Driver ductances for optimum switching performance. The Class D and E RF Generators input and output pins can be separated or combined Multi-MHz Switch Mode Supplies Pulse Transformer Driver for dual or single driver operation. However, both Pulse Laser Diode Driver sides are ground referenced together and cannot be Pulse Generator operated ground isolated from each other. Fig. 1- Block Diagram and Truth Table IN OUT 0 0 1 1 1 15 A Low-Side RF MOSFET Driver IXRFDSM607X2 Absolute Maximum Ratings Parameter Value Parameter Value Maximum Junction Temperature 150C Supply Voltage V 30V CC Operating Temperature Range -40C to 85 C Input Voltage Level V -5V to V + 0.3V IN CC Thermal Impedance (Junction to Case) R 0.25 C/W JC All Other Pins -0.3V to V +0.3V CC Moisture Sensitivity Level (MSL) 1 Power Dissipation 2W T 25 C A (AMBIENT) Note: Operating the device outside of the Absolute Maximum Rat- 100W Note: 1 T 25 C ings may cause permanent damage. Typical values indicate conditions C (CASE) for which the device is intended to be functional but do not guarantee Storage Temperature -40C to 150C specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum conditions for Soldering Lead Temperature 300C extended periods may impact device reliability. (10 seconds maximum) Note: 1- Limited by high frequency performance, not package dissipa- tion. Electrical Characteristics Unless otherwise noted, T = 25 C, 8V < V < 30V. A CC All voltage measurements with respect to GND. IXRFDSM607X2 configured as described in Test Conditions with combined outputs. Symbol Parameter Test Conditions Min Typ Max Units High input voltage 8 V V CC 1 8 V 3.5 V VIH VIL Low input voltage 8V VCC 18V 0.8 V V Input hysteresis 0.25 VHYS V VIN Input voltage range -5 VCC + 0.3 IIN Input current -10 10 A 0V VIN VCC VOH High output voltage VCC - 0.025 V VOL Low output voltage 0.025 V ROH High output resistance VCC = 15V IOUT = 100mA 0.42 ROL Low output resistance VCC = 15V IOUT = 100mA 0.22 Peak output current VCC = 15V 15 A IPEAK IDC Continuous output current Limited by package power dissipation 2.5 A VCC=15V CL=1nF 4 ns tR Rise time CL=2nF 5 ns VCC =15V CL=1nF 4 ns tF Fall time CL=2nF 5.5 ns ON propagation delay VCC =15V CL=2nF 25 ns tONDLY OFF propagation delay VCC =15V CL=2nF 22 ns tOFFDLY Minimum pulse width FWHM VCC =15V CL=1nF 8 ns PWmin VCC Power supply voltage Recommended 8 15 18 V V = 15V, VIN = 0V 0.4 1 mA CC V = 15V, VIN = 3.5V 3.8 5 mA ICC Power supply current CC V = 15V, VIN = VCC 0.4 1 mA CC CAUTION: These devices are sensitive to electrostatic discharge follow proper ESD procedures when handling and assembling. All specifications are subject to change at any time without notice. 2