IXZ6 3 1 DF1 8 N50 RF Power MOSFET & Driver IXZ318N50 MOSFET and IXRFD631 Gate Driver Module 500 V 18 A Features 0.3 Isolated substrate High isolation voltage (>2500 V) Excellent thermal transfer Increased temperature and power cycling capability IXYS advanced Z-MOS process for low parasitic capacitance Low R DS(ON) Very low insertion inductance No Beryllium Oxide (BeO) or other hazardous materials Latch-up protected Low quiescent supply current RoHS compliant Advantages Optimized for RF and high speed Easy to mount, no insulators needed High power density Applications Single package reduces size and heat sink area Class D or E switching generators Switch mode power supplies (SMPS) Pulse generators Transducer driver Description The IXZ631DF18N50 is a CMOS high-speed, high-current gate driver and MOSFET combination module specifically designed for Class D, E, HF, and RF applications at up to 27 MHz, as well as other applications. The IXZ631DF18N50 in pulse mode can provide 95 A of peak current while producing voltage rise and fall times of less than 5 ns, and minimum pulse widths of 8 ns. The input of the driver is fully immune to latch-up over the entire operating range. Designed with small internal delays, the IXZ631DF18N50 is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ631DF18N50 unmatched in performance and value. The IXZ631DF18N50 is packaged in IXYSRFs low-inductance RF package incorporating layout techniques to minimize stray lead inductances for optimum switching performance. The IXZ631DF18N50 is a surface-mountable device. Figure 1 Functional diagram IXZ6 3 1 DF1 8 N50 RF Power MOSFET & Driver Device Specifications Parameter Value Maximum junction temperature 150 C Operating temperature range - 40 C to 85 C Weight 5.5 g Symbol Test Conditions Maximum Ratings fMAX ID = 0.5 IDM25 A 27 MHz VDSS 500 V 20 V VCC VDS = 0.8 VDSS TJ = 25C 50 uA IDSS VGS = 0 V TJ = 125C 1 mA IDM25 TC = 25C 18 A TC = 25C, pulse limited by TJM 95 A IDM TC = 25C IAR 18 A PT (MOSFET and Driver) TC = 25C 625 W 0.2 C/W RthJC RthJHS 0.4 C/W Device Performance Symbol Test Condition Minimum Typical Maximum V = 15 V, I = 0.5I A CC D DM25 Pulse t 300 s, RDS(ON) 0.3 Duty Cycle 2% VCC 8 V 15 V 20 V IN (Signal Input) - 5 V VCC + 0.3 V 3.5 V 3 V VIH (High Input Voltage) V = 15 V CC VIL (Low Input Voltage) 2.8 V 0.8 V 0.23 V VHYS (Input hysteresis) f = 1 MHz ZIN 930-j7960 f = 1 MHz any one pin to the Cstray 46 pF back plane metal V (V ) = 0 V, V = 0.8 V IN GS DS DSS(max) COSS 172 pF f =1 MHz tONDLY 25 ns tOFFDLY 28 ns T = 25 C C V = 15 V 1 s pulse, CC tR 3.4 ns I = 9 A D tF 1.65 ns