MCNA75PD2200TB V = 2x2200 V RRM High Voltage Thyristor Diode Module I = 75 A TAV V = 1.21 V T Phase leg Part number MCNA75PD2200TB Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 4800 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Base plate: DCB ceramic Lighting and temperature control Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191205b 2019 IXYS all rights reservedMCNA75PD2200TB Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 2300 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 2200 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 2 2 0 0 V T = 25C 100 A R/D R/D VJ V = 2 2 0 0 V T = 1 4 0 C 10 mA R/D VJ forward voltage drop V I = 7 5 A T = 25C 1.24 V T T VJ I = 1 5 0 A 1.51 V T T = C 1.21 V I = 7 5 A 125 T VJ I = 1 5 0 A 1.58 V T average forward current T = 8 5 C T = 1 4 0 C 75 A I TAV C VJ RMS forward current I 180 sine 118 A T(RMS) V T = 1 4 0 C 0.84 V threshold voltage T0 VJ for power loss calculation only slope resistance r 5 m T 0.38 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.2 K/W thCH P total power dissipation T = 25C 302 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 1.40 kA I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.51 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C kA 1.19 VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.29 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 9.80 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 9.49 kAs R t = 10 ms (50 Hz), sine T = 1 4 0 C 7.08 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 6.87 kAs R junction capacitance V = 7 0 0 V f = 1 MHz T = 25C 39 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 4 0 C 10 W GM P C t = 300 s 5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 140C f = 50 Hz repetitive, I = 225 A 150 (di/dt) A/s cr VJ T 0.45 t = 2 0 0 s di /dt = A/s P G I = 0.45A V = V non-repet., I = 75 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 140C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.4 V GT D VJ T = -40C 1.6 V VJ gate trigger current V = 6 V T = 25C 95 mA I VJ GT D T = -40C 200 mA VJ gate non-trigger voltage V V = V T = 140C 0.2 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 10 s T = 25C 200 mA I VJ L p I = 0.45A di /dt = 0.45 A/s G G holding current I V = 6 V R = T = 25C 200 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.45A di /dt = 0.45 A/s G G turn-off time V = 100 V I = 75A V = V T =125 C 500 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191205b 2019 IXYS all rights reserved