th Date: 13 Oct, 2014 Data Sheet Issue: 4 Phase Control Thyristor Module Types MCO801-14io1 to MCO801-18io1 Absolute Maximum Ratings V RRM VDRM Type V 1400 MCO801-14io1 1800 MCO801-18io1 MAXIMUM VOLTAGE RATINGS UNITS LIMITS 1) V Repetitive peak off-state voltage 1400-1800 V DRM 1) V Non-repetitive peak off-state voltage 1400-1800 V DSM 1) V Repetitive peak reverse voltage 1400-1800 V RRM 1) V Non-repetitive peak reverse voltage 1500-1900 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS 2) I Maximum average on-state current, T =85C 830 A T(AV)M c 2) I Maximum average on-state current, T =100C 615 A T(AV)M c 2) IT(RMS)M Nominal RMS on-state current, Tc=25C 2335 A 2) I D.C. on-state current, T =25C 1965 A T(d.c.) c 3) I Peak non-repetitive surge t =10ms, V =60%V 30 kA TSM p rm RRM 3) I Peak non-repetitive surge t =10ms, V 10V 33 kA TSM2 p rm 2 2 3) 6 2 I t I t capacity for fusing t =10ms, V =60%V 4.5010 A s p rm RRM 2 2 3) 6 2 I t I t capacity for fusing t =10ms, V 10V 5.4510 A s p rm (continuous, 50Hz) 100 4) (di/dt) Critical rate of rise of on-state current (repetitive, 50Hz, 60s) 200 A/s cr (non-repetitive) 400 V Peak reverse gate voltage 5 V RGM P Mean forward gate power 4 W G(AV) P Peak forward gate power 30 W GM 5) VISOL Isolation Voltage 3000 V T Operating temperature range -40 to +130 C vj op T Storage temperature range -40 to +150 C stg Notes: 1) De-rating factor of 0.13% per C is applicable for T below 25C. vj 2) Single phase 50 Hz, 180 half-sinewave. 3) Half-sinewave, 130C Tvj initial. 4) V = 67% V , I = 2 A, t 0.5s, T = 130C. D DRM FG r C 5) AC RMS voltage, 50 Hz, 1min test Data Sheet. Types MCO801-14io1 to MCO801-18io1 Issue 4 Page 1 of 9 October, 2014 Phase Control Thyristor Module Types MCO801-14io1 and MCO801-18io1 Characteristics 1) PARAMETER MIN. TYP. MAX. TEST CONDITIONS UNITS - - 1.43 I =2400A V TM V Maximum peak on-state voltage TM - - 1.50 I =3000A V TM V Threshold voltage - - 0.80 V T0 r Slope resistance - - 0.24 mW T (dv/dt)cr Critical rate of rise of off-state voltage 1000 - - VD = 80% VDRM, linear ramp, Gate o/c V/s I Peak off-state current - - 150 Rated V DRM DRM mA I Peak reverse current - - 150 Rated V RRM RRM V Gate trigger voltage - - 2.5 V GT T = 25C, V = 12 V, I = 3 A vj D T I Gate trigger current - - 300 mA GT I Holding current - - 300 T = 25C mA H vj I Latching current - - 1500 T = 25C mA L vj t Gate controlled turn-on delay time - 0.8 2.0 gd V =40% V , I =830A, di/dt=10A/s, D DRM T s I =2A, t =0.5s, T =25C FG r j t Turn-on time - 1.4 3.0 gt Q Recovered Charge - 2800 3100 C rr Q Recovered Charge, 50% chord - 2200 - C ra I =800A, t =1000s, di/dt=10A/s, TM p V =100V r Irm Reverse recovery current - 160 - A t Reverse recovery time, 50% chord - 27 - s rr ITM=830A, tp=1000s, di/dt=10A/s, - 225 - V =100V, V =67%V , dV /dt=20V/s r dr DRM dr t Turn-off time s q I =830A, t =1000s, di/dt=10A/s, TM p - 300 - V =100V, V =67%V , dV /dt=200V/s r dr DRM dr R Thermal resistance, junction to case - - 0.042 K/W thJC R Thermal resistance, case to heatsink - - 0.010 K/W thCH F Mounting torque (to heatsink) 5.1 - 6.9 Nm 1 F Mounting torque (to terminals) 16.2 - 19.8 Nm 2 W Weight - 2.8 - kg t Notes: 1) Unless otherwise indicated Tvj=130C. Data Sheet. Types MCO801-14io1 to MCO801-18io1 Issue 4 Page 2 of 9 October, 2014