MDD175-28N1 V = 2x2800 V RRM High Voltage Standard Rectifier Module I = 240 A FAV V = 1.01 V F Phase leg Part number MDD175-28N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 Planar passivated chips Diode for main rectification Isolation Voltage: V~ 4800 Very low leakage current For single and three phase Industry standard outline Very low forward voltage drop bridge configurations RoHS compliant Improved thermal behaviour Supplies for DC power equipment Base plate: Copper Input rectifiers for PWM inverter internally DCB isolated Battery DC power supplies Advanced power cycling Field supply for DC motors Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204i 2019 IXYS all rights reservedMDD175-28N1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 2900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 2800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 2 8 0 0 V T = 25C 1 mA R VJ R V = 2 8 0 0 V T = 1 5 0 C 5 mA R VJ forward voltage drop V I = 2 0 0 A T = 25C 1.07 V F F VJ I = 4 0 0 A 1.26 V F T = C 1.01 V I = 2 0 0 A 125 F VJ I = 4 0 0 A 1.26 V F average forward current T = 1 0 0 C T = 1 5 0 C 240 A I FAV C VJ 180 sine d = 0.5 V T = 1 5 0 C 0.74 V threshold voltage F0 VJ for power loss calculation only slope resistance r 1.27 m F thermal resistance junction to case 0.14 K/W R thJC thermal resistance case to heatsink K/W R 0.04 thCH P total power dissipation T = 25C 900 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 8.50 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 9.18 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 7.23 VJ t = 8,3 ms (60 Hz), sine V = 0 V 7.81 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 361.3 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 350.6 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 261.0 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 253.4 kAs R V = 1 1 0 0 V f = 1 MHz T = 25C 182 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204i 2019 IXYS all rights reserved