X-On Electronics has gained recognition as a prominent supplier of MMIX1H60N150V1 SCRs across the USA, India, Europe, Australia, and various other global locations. MMIX1H60N150V1 SCRs are a product manufactured by IXYS. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

MMIX1H60N150V1 IXYS

MMIX1H60N150V1 electronic component of IXYS
MMIX1H60N150V1 IXYS
MMIX1H60N150V1 SCRs
MMIX1H60N150V1  Semiconductors

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See Product Specifications
Part No. MMIX1H60N150V1
Manufacturer: IXYS
Category: SCRs
Description: SCRs IGBT SMPD PKG-STANDARD
Datasheet: MMIX1H60N150V1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 56.9556 ea
Line Total: USD 56.96 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 56.9556
10 : USD 53.5062
20 : USD 51.7714

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 65.377

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Breakover Voltage Vbo
Height
Length
Off-State Capacitance Co
Off-State Leakage Current Vdrm Idrm
Width
Brand
Cnhts
Hts Code
Mxhts
Non Repetitive On-State Current
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the MMIX1H60N150V1 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMIX1H60N150V1 and other electronic components in the SCRs category and beyond.

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Preliminary Technical Information V = 1500V 1500V MOS Gated MMIX1H60N150V1 DM Thyristor A w/ Anti-Parallel Diode A G (Electrically Isolated Tab) G K K Isolated Tab Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V A DM J V Continuous 30 V GK V Transient 40 V GK I T = 25C, 1s 32.0 kA TSM C K T = 25C, 10s 11.8 kA C P T = 25C 446 W D C G T -55 ... +150 C J T 150 C JM G = Gate K = Cathode T -55 ... +150 C stg A = Anode T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10s 260 C SOLD V 50/60Hz, 1 minute 2500 V~ ISOL Features F Mounting Force 50..200/11..45 N/lb C Weight 8 g Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Anti-Parallel Diode 2500V~ Electrical Isolation Very High Current Capability Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250 A, V = 0V 1500 V BR A GK High Power Density Low Gate Drive Requirement V I = 250A, V = V 2.5 5.0 V GK(th) A AK GK V I = 1000A, V = 15V 4.6 6.0 V T T GK Applications r I > I , V = 15V 1.2 m T T L GK V V = 15V 4.8 V Capacitive Discharge Circuits BO GK Ignition Circuits I V = 1500V, V = 0V 15 A D AK GK Solid State Surge Protection T = 125C 1.5 mA J I 400 A L I 350 A H I V = 0V, V = 30V 200 nA GKS AK GK 2014 IXYS CORPORATION, All Rights Reserved DS100595A(6/14)MMIX1H60N150V1 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J C 5120 pF iks C V = 25V, V = 0V, f = 1MHz 340 pF AK GK oks C 84 pF rks Q 180 nC g(on) Q I = 60A, V = 15V, V = 600V 33 nC gk C GK AK Q 62 nC ga t 100 ns Capacitive Discharge, T = 25C ri J I = 2000A, V = 15V, R = 1 A GK G t 50 ns d V = 1000V, L < 20nH, Notes 2 & 3 AK Capacitive Discharge, T = 125C t 100 ns J ri I = 2000A, V = 15V, R = 1 A GK G t 50 ns V = 1000V, L < 20nH, Notes 2 & 3 d AK R 0.28 C/W thJC R 0.05 C/W thCS R 19 C/W thJA Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. V I = 100A, V = 0V, Note 1 1.8 V F F GK I 20 A I = 50A, V = 0V, RM F GK -di /dt = 200A/s, V = 300V t 700 ns F R rr R 0.50 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 9 & 10. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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