Preliminary Technical Information V = 1500V 1500V MOS Gated MMIX1H60N150V1 DM Thyristor A w/ Anti-Parallel Diode A G (Electrically Isolated Tab) G K K Isolated Tab Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V A DM J V Continuous 30 V GK V Transient 40 V GK I T = 25C, 1s 32.0 kA TSM C K T = 25C, 10s 11.8 kA C P T = 25C 446 W D C G T -55 ... +150 C J T 150 C JM G = Gate K = Cathode T -55 ... +150 C stg A = Anode T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10s 260 C SOLD V 50/60Hz, 1 minute 2500 V~ ISOL Features F Mounting Force 50..200/11..45 N/lb C Weight 8 g Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Anti-Parallel Diode 2500V~ Electrical Isolation Very High Current Capability Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250 A, V = 0V 1500 V BR A GK High Power Density Low Gate Drive Requirement V I = 250A, V = V 2.5 5.0 V GK(th) A AK GK V I = 1000A, V = 15V 4.6 6.0 V T T GK Applications r I > I , V = 15V 1.2 m T T L GK V V = 15V 4.8 V Capacitive Discharge Circuits BO GK Ignition Circuits I V = 1500V, V = 0V 15 A D AK GK Solid State Surge Protection T = 125C 1.5 mA J I 400 A L I 350 A H I V = 0V, V = 30V 200 nA GKS AK GK 2014 IXYS CORPORATION, All Rights Reserved DS100595A(6/14)MMIX1H60N150V1 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J C 5120 pF iks C V = 25V, V = 0V, f = 1MHz 340 pF AK GK oks C 84 pF rks Q 180 nC g(on) Q I = 60A, V = 15V, V = 600V 33 nC gk C GK AK Q 62 nC ga t 100 ns Capacitive Discharge, T = 25C ri J I = 2000A, V = 15V, R = 1 A GK G t 50 ns d V = 1000V, L < 20nH, Notes 2 & 3 AK Capacitive Discharge, T = 125C t 100 ns J ri I = 2000A, V = 15V, R = 1 A GK G t 50 ns V = 1000V, L < 20nH, Notes 2 & 3 d AK R 0.28 C/W thJC R 0.05 C/W thCS R 19 C/W thJA Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. V I = 100A, V = 0V, Note 1 1.8 V F F GK I 20 A I = 50A, V = 0V, RM F GK -di /dt = 200A/s, V = 300V t 700 ns F R rr R 0.50 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 9 & 10. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537