th Date:- 16 June, 2016 Data Sheet Issue:- P1 Phase Control Thyristor Types N5415EA320 & N5415EA360 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 3200-3600 V DRM VDSM Non-repetitive peak off-state voltage, (note 1) 3300-3700 V V Repetitive peak reverse voltage, (note 1) 3200-3600 V RRM V Non-repetitive peak reverse voltage, (note 1) 3300-3700 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Mean on-state current. T =55C, (note 2) 5415 A T(AV) sink I Mean on-state current. T =85C, (note 2) 3820 A T(AV) sink I Mean on-state current. T =85C, (note 3) 2125 A T(AV) sink I Nominal RMS on-state current. T =25C, (note 2) 10530 A T(RMS) sink I D.C. on-state current. T =25C, (note 4) 9515 A T(d.c.) sink I Peak non-repetitive surge t =10ms, V =0.6V , (note 5) 65 kA TSM p RM RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 72 kA TSM2 p RM 2 2 6 2 I t I t capacity for fusing t =10ms, V =0.6V , (note 5) 21.110 A s p RM RRM 2 2 6 2 I t 25.910 A s I t capacity for fusing t =10ms, V 10V, (note 5) p RM Maximum rate of rise of on-state current (repetitive), (Note 6) 150 A/s di /dt T Maximum rate of rise of on-state current (non-repetitive), (Note 6) 300 A/s V Peak reverse gate voltage 5 V RGM P Mean forward gate power 5 W G(AV) P Peak forward gate power 30 W GM VGD Non-trigger gate voltage, (Note 7) 0.25 V T Operating temperature range -40 to +125 C HS T Storage temperature range -40 to +150 C stg Notes: - 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Cathode side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =5000A, I =2A, t0.5s, T =125C. D DRM TM FG r case 7) Rated VDRM. Data Sheet. Types N5415EA320 and N5415EA360 Issue P1. Page 1 of 10 June, 2016 Phase Control Thyristor Types N5415EA320 and N5415EA360 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V Maximum peak on-state voltage - - 1.55 I =5000A V TM TM V Threshold voltage - - 0.913 V T0 r Slope resistance - - 0.125 T mW dv/dt Critical rate of rise of off-state voltage 1000 - - V =80% V , Linear ramp, gate o/c V/s D DRM I Peak off-state current - - 200 Rated V mA DRM DRM I Peak reverse current - - 200 Rated V mA RRM RRM V Gate trigger voltage - - 3.0 V GT Tj=25C, VD=10V, IT=3A I Gate trigger current - - 300 mA GT I Holding current - - 1000 T =25C mA H j t Gate controlled turn-on delay time - 0.9 1.3 gd I =2A, t =0.5s, V =67%V , FG r D DRM s ITM=2000A, di/dt=10A/s, Tj=25C t Turn-on time - 2.4 4.0 gt Q Recovered Charge - 11500 13000 C rr Q Recovered Charge, 50% chord - 7150 - C ra I =2000A, t =2000s, di/dt=10A/s, TM p Vr=100V I Reverse recovery current - 275 - A rm t Reverse recovery time, 50% chord - 52 - s rr I =2000A, t =2000s, di/dt=10A/s, TM p - 625 - V =100V, V =80%V , dV /dt=20V/s r dr DRM dr t Turn-off time s q I =2000A, t =2000s, di/dt=10A/s, TM p - 1000 - V =100V, V =80%V , dV /dt=200V/s r dr DRM dr - - 0.005 Double side cooled K/W Thermal resistance, junction to R - - 0.012 Cathode side cooled K/W thJK heatsink - - 0.009 Anode side cooled K/W F Mounting force 76 - 93 kN W Weight - 1.55 - kg t Data Sheet. Types N5415EA320 and N5415EA360 Issue P1. Page 2 of 10 June, 2016