Date:- 2 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0929LC10x to R0929LC12x Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 1000-1200 V DRM VDSM Non-repetitive peak off-state voltage, (note 1) 1000-1200 V V Repetitive peak reverse voltage, (note 1) 1000-1200 V RRM V Non-repetitive peak reverse voltage, (note 1) 1100-1300 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Mean on-state current, T =55C, (note 2) 929 A T(AV) sink I Mean on-state current. T =85C, (note 2) 603 A T(AV) sink I Mean on-state current. T =85C, (note 3) 339 A T(AV) sink I Nominal RMS on-state current, T =25C, (note 2) 1893 A T(RMS) sink I D.C. on-state current, T =25C, (note 4) 1505 A T(d.c.) sink I Peak non-repetitive surge t =10ms, V =0.6V , (note 5) 9.0 kA TSM p RM RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 9.9 kA TSM2 p RM 2 2 3 2 I t I t capacity for fusing t =10ms, V =0.6V , (note 5) 40510 A s p RM RRM 2 3 2 2 I t I t capacity for fusing t =10ms, V 10V, (note 5) 49010 A s p RM Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/s (di/dt) cr Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/s V Peak reverse gate voltage 5 V RGM P Mean forward gate power 2 W G(AV) P Peak forward gate power 30 W GM V Non-trigger gate voltage, (Note 7) 0.25 V GD T Operating temperature range -40 to +125 C HS T Storage temperature range -40 to +150 C stg Notes:- 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Single side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =2A, t0.5s, T =125C. D DRM FG r case 7) Rated V . DRM Data Sheet R0929LC10x to R0929LC12x Issue 2 Page 1 of 12 August 2012 Distributed gate thyristor R0929LC10x to R0929LC12x Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V Maximum peak on-state voltage - - 2.04 I =1400A V TM TM V Threshold voltage - - 1.549 V T0 r Slope resistance - - 0.350 T mW (dv/dt) Critical rate of rise of off-state voltage 200 - - V =80% V , linear ramp V/s cr D DRM I Peak off-state current - - 70 Rated V mA DRM DRM I Peak reverse current - - 70 Rated V mA RRM RRM V Gate trigger voltage - - 3.0 V GT T =25C V =10V, I =3A j D T I Gate trigger current - - 300 mA GT I Holding current - - 1000 T =25C mA H j t Gate-controlled turn-on delay time - 0.9 2.0 s gt VD=67% VDRM, IT=1500A, di/dt=60A/s, I =2A, t =0.5s, T =25C FG r j t Turn-on time - 0.4 1.0 s gd Q Recovered charge - 150 - C rr Q Recovered charge, 50% Chord - 85 100 C ra I =1000A, t =1000s, di/dt=60A/s, TM p V =50V r I Reverse recovery current - 70 - A rm trr Reverse recovery time - 2.2 - s I =1000A, t =1000s, di/dt=60A/s, TM p - - 20 V =50V, V =33%V , dV /dt=20V/s r dr DRM dr tq Turn-off time (note 2) s I =1000A, t =1000s, di/dt=60A/s, TM p 15 - 15 V =50V, V =33%V , dV /dt=200V/s r dr DRM dr - - 0.032 Double side cooled K/W R Thermal resistance, junction to heatsink thJK - - 0.064 Single side cooled K/W F Mounting force 10 - 20 kN W Weight - 340 - g t Notes:- 1) Unless otherwise indicated T =125C. j 2) The required tq (specified with dVdr/dt=200V/s) is represented by an x in the device part number. See ordering information for details of tq codes. Data Sheet R0929LC10x to R0929LC12x Issue 2 Page 2 of 12 August 2012