VBE 100-06NO7 I = 100 A Single Phase Rectifier Bridge dAV V = 600 V RRM with Fast Recovery Epitaxial Diodes (FRED) t = 35 ns rr in ECO-PAC 2 Preliminary data sheet PS16 V V Typ RSM RRM V V ~ L 9 ~ K10 600 600 VBE 100-06NO7 EG 1 B3 Pin arangement see outlines Symbol Conditions Maximum Ratings Features Package with DCB ceramic I T = 85C, module 100 A dAV C base plate in low profile I 100 A dAVM Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz), sine 600 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 640 A R Low forward voltage drop Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 520 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 555 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 1800 A s VJ Supplies for DC power equipment 2 V = 0 t = 8.3 ms (60 Hz), sine 1720 A s R Input and output rectifiers for high 2 frequency T = T t = 10 ms (50 Hz), sine 1350 A s VJ VJM 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 1295 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Space and weight savings V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Improved temperature and power I 1 mA t = 1 s 3600 V~ ISOL cycling capability Small and light weight M Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. d Low noise switching Weight typ. 24 g Dimensions in mm (1 mm = 0.0394 ) Symbol Conditions Characteristic Values typ. max. I V = V T = 25C 0.1 mA R R RRM VJ V = V T = T 2.5 mA R RRM VJ VJM V I = 60 A T = 25C 2.04 V F F VJ V for power-loss calculations only 1.09 V T0 r 4.3 m T R per diode DC current 0.8 K/W thJC R per diode, DC current, typ. 0.2 K/W thCH I I = 130 A, -diF/dt = 100 A/s 6.8 A RM F V = 100 V, T = 100C R VJ t I = 1 A -di/dt = 300 A/s V = 30 V, T = 25C 35 ns rr F R VJ 2 a Max. allowable acceleration 50 m/s d creeping distance on surface (pin to heatsisnk) 11.2 mm S d strike distance in air (pin to heatsisnk) 9.7 mm A Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 2002 IXYS All rights reserved 1 - 2 241VBE 100-06NO7 160 4000 80 T = 100C VJ T =100C A VJ V =300V R V =300V nC R 140 A 120 3000 60 I T =25C F VJ I =120A I F Q RM T =100C r VJ I =60A 100 F T =150C I = 120 A VJ F I =30A F I =60A F 80 2000 40 I =30A F 60 40 1000 20 20 DWLP55-06 DWLP55-06 DWLP55-06 0 0 0 B3 A/ s 012 V 100 A/ s 1000 0 200 400 600 800 1000 V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 140 20 1.6 T =100C VJ ns V =300V R V s V 130 FR V t t FR fr rr t 1.5 15 1.2 rr K I =120A F f 120 I =60A F I =30A F T =100C VJ 1.0 110 10 0.8 I =60A F I RM 100 0.5 5 0.4 Q r 90 DWLP55-06 DWLP55-06 DWLP55-06 0.0 80 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 A/800 s 1000 C A/ s di /dt T -di /dt F VJ F Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 1 K/W 0.1 Z thJC 0.01 0.001 VUE 130-06 0.0001 s 0.00001 0.0001 0.001 0.01 0.1 1 t Fig. 7 Typical transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values IXYS reserves the right to change limits, test conditions and dimensions. 2002 IXYS All rights reserved 2 - 2 241