VBE 55-12NO7 TM I = 59 A ECO-PAC dAV V = 1200 V RRM Single Phase Rectifier Bridge t = 40 ns rr D V V Typ RSM RRM V V A N 1200 1200 VBE 55-12NO7 K Symbol Conditions Maximum Ratings Features Package with DCB ceramic I T = 85C, module 59 A dAV C base plate in low profile I 90 A dAVM Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz), sine 200 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 220 A R Low forward voltage drop Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 170 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 190 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 200 A s VJ Supplies for DC power equipment 2 V = 0 t = 8.3 ms (60 Hz), sine 205 A s R Input and output rectifiers for high 2 frequency T = T t = 10 ms (50 Hz), sine 145 A s VJ VJM 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 150 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Space and weight savings V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Improved temperature and power I 1 mA t = 1 s 3600 V~ ISOL cycling capability Small and light weight M Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. d Low noise switching Weight typ. 19 g Dimensions in mm (1 mm = 0.0394 ) Symbol Conditions Characteristic Values typ. max. I V = V T = 25C 0.25 mA R R RRM VJ V = V T = T 1.0 mA R RRM VJ VJM V I = 30 A T = 25C 2.71 V F F VJ V for power-loss calculations only 1.31 V T0 r 15 m T R per diode DC current 0.9 K/W thJC R per diode, DC current, typ. 0.3 K/W thCH I I = 50 A, -diF/dt = 100 A/s 6 11.4 A RM F V = 100 V, L = 0.05 mH, T = 100C R VJ t I = 1 A -di/dt = 200 A/s V = 30 V, T = 25C 40 tbd ns rr F R VJ 2 a Max. allowable acceleration 50 m/s d creeping distance on surface 11.2 mm S d creepage distance in air 9.7 mm A Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 2 032VBE 55-12NO7 70 5 60 T = 100C T = 100C VJ VJ A A mC V = 600V V = 600V R R 60 50 4 Q I r RM I 50 F 40 T =150C VJ I = 60A 3 F T =100C 40 I = 60A VJ F I = 30A F I = 30A T = 25C 30 I = 15A F VJ F I = 15A 30 F 2 20 20 1 10 10 0 0 0 0123 V4 100 1000 0 200 400 600 A/800ms 1000 A/ms V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 220 120 1.2 T = 100C T = 100C VJ VJ V = 600V ns R I = 30A F V s 200 V FR t 1.5 t fr fr t rr K f 80 0.8 V 180 FR I = 60A F I = 30A 1.0 F I = 15A I RM F 160 40 0.4 0.5 140 Q r 0.0 120 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 A/800ms 1000 C A/ms di /dt T -di /dt F VJ F Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 1 Constants for Z calculation: thJC K/W iR (K/W) t (s) thi i 1 0.3012 0.0052 0.1 2 0.116 0.0003 Z thJC 3 0.0241 0.0004 4 0.4586 0.0092 0.01 VUE 55-12NO7 / VUE 75-12NO7 0.001 s 0.0001 0.001 0.01 0.1 1 10 t Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 2000 IXYS All rights reserved 2 - 2