VBO13-08NO2 IXYS

VBO 13 I = 18 A dAV Single Phase Rectifier Bridge V = 800-1600 V RRM Standard and Avalanche Types + V V V Standard Avalanche RSM BRmin RRM ~ V V V Types Types - 900 800 VBO 13-08NO2 ~ 1300 1230 1200 VBO 13-12NO2 VBO 13-12AO2 ~ + 1700 1630 1600 VBO 13-16NO2 VBO 13-16AO2 ~ For Avalanche Types only - Features Symbol Conditions Maximum Ratings Avalanche rated parts available I T = 85C, module 18 A dAV C Package with DCB ceramic base plate I module 30 A dAVM Isolation voltage 3600 V~ P T = T 2.5 kW RSM VJ VJM Planar passivated chips I T = 45C t = 10 ms (50 Hz) 220 A FSM VJ Low forward voltage drop V = 0 t = 8.3 ms (60 Hz) 230 A R fast-on terminals UL registered E 72873 T = T t = 10 ms (50 Hz) 180 A VJ VJM V = 0 t = 8.3 ms (60 Hz) 190 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz) 240 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 220 A s Supplies for DC power equipment R Input rectifiers for PWM inverter 2 T = T t = 10 ms (50 Hz) 160 A s VJ VJM Battery DC power supplies 2 V = 0 t = 8.3 ms (60 Hz) 150 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Easy to mount with one screw V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Space and weight savings I < 1 mA t = 1 s 3600 V~ ISOL Improved temperature & power cycling M Mounting torque (M5) 1.5-2 Nm d Dimensions in mm (1 mm = 0.0394) (10-32 UNF) 13-18 lb.in. Weight Typ. 15 g Symbol Conditions Characteristic Values I V = V T = 25C 0.3 mA R R RRM VJ T = T 5.0 mA VJ VJM V I = 55 A T = 25C 1.8 V F F VJ V For power-loss calculations only 0.85 V T0 r 17 mW t R per diode 120 el. 5.60 K/W thJC per module 1.40 K/W R per diode 120 el. 6.00 K/W thJH per module 1.50 K/W d Creeping distance on surface 13 mm S d Creepage distance in air 9.5 mm A 2 a Max. allowable acceleration 50 m/s Data according to IEC 60747 and refer to a single diode unless otherwise stated. for resistive load at bridge output with isolated fast-on tabs. IXYS reserves the right to change limits, test conditions and dimensions. 20100706b IXYS All rights reserved 1 - 2 PHASE-OUTVBO 13 2 Fig. 1 Surge overload current per diode Fig. 2 I t versus time (1-10 ms) Fig. 3 Max. forward current at case I : Crest value, t: duration per diode temperature FSM Fig. 4 Power dissipation versus direct output current and ambient temperature Constants for Z calculation: thJK i R (K/W) t (s) thi i 1 0.059 0.00217 2 2.714 0.159 3 3.227 2.34 Fig. 5 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. 20100706b IXYS All rights reserved 2 - 2 PHASE-OUT