VBO25-12NO2 IXYS

VBO 25 I = 38 A dAV Single Phase Recti er Bridge V = 800-1200 V RRM Standard and Avalanche Types Replacement: VBO25-12/16NO2 resp. VBO25-16AO2 + V V V Standard Avalanche RSM BRmin RRM V V V Types Types 900 800 VBO 25-08NO2 ~ 1300 1230 1200 VBO 25-12AO2 ~ For Avalanche Type only - Features Symbol Conditions Maximum Ratings Avalanche rated parts available I T = 85C, module 38 A dAV C Package with DCB ceramic base plate I module 40 A dAVM Isolation voltage 3600 V~ P T = T 3.4 kW RSM VJ VJM Planar passivated chips I T = 45C t = 10 ms (50 Hz) 370 A FSM VJ Low forward voltage drop V = 0 t = 8.3 ms (60 Hz) 390 A R fast-on terminals UL registered E 72873 T = T t = 10 ms (50 Hz) 320 A VJ VJM V = 0 t = 8.3 ms (60 Hz) 340 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz) 680 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 640 A s Supplies for DC power equipment R Input recti ers for PWM inverter 2 T = T t = 10 ms (50 Hz) 510 A s VJ VJM Battery DC power supplies 2 V = 0 t = 8.3 ms (60 Hz) 470 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Easy to mount with one screw V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Space and weight savings I < 1 mA t = 1 s 3600 V~ ISOL Improved temperature & power cycling M Mounting torque (M5) 1.5-2 Nm d Dimensions in mm (1 mm = 0.0394) (10-32 UNF) 13-18 lb.in. Weight Typ. 15 g Symbol Conditions Characteristic Values I V = V T = 25C 0.3 mA R R RRM VJ T = T 5.0 mA VJ VJM V I = 55 A T = 25C 1.36 V F F VJ V For power-loss calculations only 0.85 V T0 r 8 m t R per diode 120 el. 2.80 K/W thJC per module 0.70 K/W R per diode 120 el. 3.20 K/W thJH per module 0.80 K/W d Creeping distance on surface 13 mm S d Creepage distance in air 9.5 mm A 2 a Max. allowable acceleration 50 m/s Data according to IEC 60747 and refer to a single diode unless otherwise stated. for resistive load at bridge output with isolated fast-on tabs. IXYS reserves the right to change limits, test conditions and dimensions. 20200624d IXYS All rights reserved 1 - 2 PHASE-OUTVBO 25 350 60 800 50 Hz V = 0 V R 0.8 x V RRM 300 600 40 250 I T = 45C F 2 VJ I t I FSM T = 45C VJ A 400 200 T = 150C VJ T = 150C 2 20 VJ A A s T = VJ 125C 150 150C 200 T = 25C VJ 100 0 -3 -2 -1 0 10 10 10 10 0.6 0.8 1.0 1.2 1.4 1.6 1 10 t ms V V t s F 2 Fig. 1 Forward current vs. Fig. 2 Surge overload current Fig. 3 I t vs. time per diode voltage drop per diode vs. time per diode 60 R : thJA 28 DC = DC = 0.6 KW 1 1 0.8 KW 0.5 24 0.4 0.5 1 KW 0.33 2 KW 0.4 20 40 0.17 4 KW 0.33 0.08 I P F(AV)M tot 16 8 KW 0.17 0.08 A W 12 20 8 4 0 0 0 4 8 12 16 20 24 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 T C I A T C A dAVM C Fig. 4 Power dissipation vs. forward current Fig. 5 Max. forward current vs. and ambient temperature per diode case temperature per diode 2.5 2.0 Constants for Z calculation: thJC 1.5 Z i R (K/W) t (s) thJC th i 1.0 1 0.061 0.001 2 0.203 0.008 K/W 3 0.500 0.250 0.5 4 0.703 0.060 5 0.533 0.300 0.0 1 10 100 1000 10000 t ms Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, test conditions and dimensions. 20200624d IXYS All rights reserved 2 - 2 PHASE-OUT