VBO36-12NO8 IXYS

VBO 36 I = 30 A dAV Three Phase Rectifier Bridge V = 800-1800 V RRM + - V V Type RSM RRM ~ V V DSM DRM V V ~ 800 800 VBO 36-08NO8 ~ 1200 1200 VBO 36-12NO8 1400 1400 VBO 36-14NO8 ~ + - 1600 1600 VBO 36-16NO8 1800 1800 VBO 36-18NO8 Features Symbol Conditions Maximum Ratings Package with fast-on terminals I T = 85C, module 25 A dAV C Isolation voltage 3000 V~ I T = 62C, module 30 A dAVM C Planar passivated chips I T = 45C t = 0 ms (50 Hz) 550 A FSM VJ Blocking voltage up to 800 V V = 0 t = 8.3 ms (60 Hz) 600 A R Low forward voltage drop UL registered E 72873 T = T t = 0 ms (50 Hz) 500 A VJ VJM V = 0 t = 8.3 ms (60 Hz) 550 A R Applications 2 2 I t T = 45C t = 0 ms (50 Hz) 520 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 520 A s Supplies for DC power equipment R Input rectifiers for PWM inverter 2 T = T t = 0 ms (50 Hz) 250 A s VJ VJM Battery DC power supplies 2 V = 0 t = 8.3 ms (60 Hz) 250 A s R Field supply for DC motors T -40...+ 50 C VJ T 50 C VJM Advantages T -40...+ 50 C stg Easy to mount with one screw V 50/60 Hz, RMS t = min 2500 V~ ISOL Space and weight savings I < mA t = s 3000 V~ ISOL Improved temperature & power cycling M Mounting torque (M5) 2 0% Nm d ( 0-32 UNF) 8 0% lb.in. Dimensions in mm (1 mm = 0.0394) Weight Typ. 22 g 6.3 x 0.8 Symbol Conditions Characteristic Values I V = V T = 25C 0.3 mA R R RRM VJ T = T 2.0 mA VJ VJM V I = 50 A T = 25C .7 V F F VJ V For power-loss calculations only 0.8 V T0 r 5.8 mW t R per diode 20 el. 6.20 K/W thJC per module .55 K/W D E R per diode 20 el. 7.40 K/W thCH per module .85 K/W d Creeping distance on surface 2.7 mm S d Creepage distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s B A Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20070807 IXYS All rights reserved - 2T C C VBO 36 4 1.9 200 10 1.8 I A FSM T = 45C T = 150C VJ VJ 480 500 1.6 150 1.4 1.2 100 3 10 45C 150C 1.0 0 V RRM 50 0.8 V RRM 150C 0.6 1 V 25C RRM 0 2 10 0.4 0.5 1 1.5 2 2.5 0 1 2 3 1 2 4 6 10 10 10 10 10 V V t ms t ms F 2 Fig. Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I t versus time ( - 0 ms) voltage drop per diode I : crest value, t: duration per diode or thyristor FSM 70 50 50 DC 0.36 = R K/W thCA 65 60 sin. 180 0.71 40 rec. 120 rec. 60 50 75 rec. 30 1.43 30 40 90 105 30 2.86 20 DC sin. 180 120 20 rec. 120 rec. 60 7.14 10 rec. 30 135 10 0 150 0 50 100 150 200 10 20 0 50 100 150 T C I A T K C FAVM amb Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature 8 Z thJK 6 Z thJC 4 2 0 0.01 0.1 1 10 100 t s Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 20070807 IXYS All rights reserved 2 - 2 P W I A Z K/W tot th F I / I F(OV) FSM 2 I A A s dAV