VBO40-08NO6 3~ 1~ Standard Rectifier Rectifier V = 800 V RRM I 40 A = DAV A I = 320 FSM 1~ Rectifier Bridge Part number VBO40-08NO6 Backside: isolated 3 2 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Diode for main rectification Isolation Voltage: V~ 3000 Very low leakage current For one phase bridge configurations Industry standard outline Very low forward voltage drop Supplies for DC power equipment RoHS compliant Improved thermal behaviour Input rectifiers for PWM inverter Epoxy meets UL 94V-0 Battery DC power supplies Base plate: Copper Field supply for DC motors internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211c 2019 IXYS all rights reservedVBO40-08NO6 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 8 0 0 V T = 25C 40 A R VJ R V = 8 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 2 0 A T = 25C 1.15 V F F VJ I = 4 0 A 1.33 V F T = C 1.07 V I = 2 0 A 125 F VJ I = 4 0 A 1.31 V F bridge output current T = 1 1 5 C T = 1 5 0 C 40 A I DAV C VJ rectangular d = 0.5 V T = 1 5 0 C 0.81 V threshold voltage F0 VJ for power loss calculation only slope resistance r 12.1 m F thermal resistance junction to case 1.3 K/W R thJC thermal resistance case to heatsink K/W R 0.1 thCH P total power dissipation T = 25C 95 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 320 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 345 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 270 VJ t = 8,3 ms (60 Hz), sine V = 0 V 295 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 510 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 495 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 365 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 360 As R V = 4 0 0 V f = 1 MHz T = 25C 11 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191211c 2019 IXYS all rights reserved