VGO 36-16io7 Single Phase Rectifier Bridge I =36A dAV V = 1600 V RRM Preliminary data K A V V Type RSM RRM V V H DSM DRM N VV G D 1700 1600 VGO 36-16io7 Symbol Test Conditions Maximum Ratings Features I T = 85C, module 36 A dAV H Package with DCB ceramic I module 40 A dAVM base plate I , I per leg 31 A FRMS TRMS Isolation voltage 3000 V~ I , I T = 45C t = 10 ms (50 Hz), sine 320 A Planar passivated chips FSM TSM VJ V = 0 V t = 8.3 ms (60 Hz), sine 350 A Low forward voltage drop R Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 280 A VJ VJM V = 0 V t = 8.3 ms (60 Hz), sine 310 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 500 A s VJ 2 V = 0 V t = 8.3 ms (60 Hz), sine 520 A s R Supplies for DC power equipment 2 Input rectifiers for PWM inverter T = T t = 10 ms (50 Hz), sine 390 A s VJ VJM 2 V = 0 V t = 8.3 ms (60 Hz), sine 400 A s Battery DC power supplies R Field supply for DC motors (di/dt) T = 125C repetitive, I = 50 A 150 A/s cr VJ T f = 50 Hz, t = 200 s P Advantages V = 2/3 V D DRM I = 0.3 A, non repetitive, I = 1/2 I 500 A/s G T dAV Easy to mount with two screws di /dt = 0.3 A/s G Space and weight savings (dv/dt) T = T V = 2/3 V 1000 V/s cr VJ VJM DR DRM Improved temperature and power R = method 1 (linear voltage rise) cycling capability GK Small and light weight V 10 V RGM P T = T t = 30 s 10 W GM VJ VJM p I = I t = 500 s 5W T TAVM p t = 10 ms 1W p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL I 1 mA t = 1 s 3000 V~ ISOL M Mounting torque (M4) 1.5 - 2 Nm d 14 - 18 lb.in. Weight typ. 18 g Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. 20100705a 2010 IXYS All rights reserved 1 - 2VGO 36-16io7 Symbol Test Conditions Characteristic Values 10 1: I , T = 125C GT VJ I , I V = V V = V T = T 5mA R D R RRM D DRM VJ VJM 2: I , T = 25C GT VJ V T = 25C 0.3 mA VJ 3: I , T = -40C GT VJ V G V , V I , I = 45 A T = 25C 1.45 V T F T F VJ V For power-loss calculations only (T = 125C) 0.85 V T0 VJ 3 r 13 m T 2 1 6 1 V V = 6 V T = 25C 1.0 V GT D VJ 5 T = -40C 1.2 V VJ 4 I V = 6 V T = 25C 65 mA GT D VJ T = -40C 80 mA VJ T = 125C 50 mA VJ 4: P = 0.5 W GAV V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM 5: P = 1 W GM I T = T V = 2/3 V 5mA GD VJ VJM D DRM I , T = 125C 6: P = 10 W GD VJ GM 0.1 I I = 0.3 A t = 30 s T = 25C 150 mA 1 10 100 1000 L G G VJ mA di /dt = 0.3 A/s T = -40C 200 mA I G VJ G T = 125C 100 mA VJ Fig. 1 Gate trigger range I T = 25C V = 6 V R = 100 mA H VJ D GK 1000 t T = 25C V = 1/2 V 2 s gd VJ D DRM T = 25C VJ I = 0.3 A di /dt = 0.3 A/s G G s t T = 125C, I = 15 A, t = 300 s, V = 100 V typ. 150 s q VJ T P R t gd di/dt = -10 A/s, dv/dt = 20 V/s, V = 2/3 V D DRM typ. Limit 100 R per thyristor (diode) DC current 1.4 K/W thJC per module 0.35 K/W R per thyristor (diode) DC current 2.0 K/W thJK per module 0.5 K/W d Creepage distance on surface 12.6 mm S 10 d Creepage distance in air 6.3 mm A 2 a Max. allowable acceleration 50 m/s 1 10 100 1000 mA I G Dimensions in mm (1 mm = 0.0394 ) Fig. 2 Gate controlled delay time t gd IXYS reserves the right to change limits, test conditions and dimensions. 20100705a 2010 IXYS All rights reserved 2 - 2