VHF 15 I = 21 A Half Controlled dAVM V = 800-1600 V RRM Single Phase Rectifier Bridge with Freewheeling Diode 3 2 2 V V Type RSM RRM 1 1 3 6 V V DSM DRM VV 6 4 4 900 800 VHF 15-08io5 1300 1200 VHF 15-12io5 8 1500 1400 VHF 15-14io5 8 1700 1600 VHF 15-16io5 Symbol Test Conditions Maximum Ratings Features Package with DCB ceramic base I T = 85 C, module 15 A dAV K plate I module 21 A dAVM Isolation voltage 3600 V~ I , I per leg 15 A FRMS TRMS Planar passivated chips I , I T = 45 C t = 10 ms (50 Hz), sine 190 A 1/4 fast-on terminals FSM TSM VJ V = 0 V t = 8.3 ms (60 Hz), sine 210 A UL registered E 72873 R T = T t = 10 ms (50 Hz), sine 170 A VJ VJM V = 0 V t = 8.3 ms (60 Hz), sine 190 A R Applications 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 160 A s Supply for DC power equipment VJ 2 V = 0 V t = 8.3 ms (60 Hz), sine 180 A s DC motor control R 2 T = T t = 10 ms (50 Hz), sine 140 A s VJ VJM 2 V = 0 V t = 8.3 ms (60 Hz), sine 145 A s R Advantages (di/dt) T = 125 C repetitive, I = 50 A 150 A/ s cr VJ T Easy to mount with two screws f =50 Hz, t =200 s P Space and weight savings V = 2/3 V D DRM Improved temperature and power I = 0.3 A, non repetitive, I = 1/2 I 500 A/ s G T dAV cycling di /dt = 0.3 A/ s G (dv/dt) T = T V = 2/3 V 1000 V/ s cr VJ VJM DR DRM R = method 1 (linear voltage rise) Dimensions in mm (1 mm = 0.0394 ) GK V 10 V RGM P T = T t = 30 s 10 W GM VJ VJM p I = I t = 500 s 5W T TAVM p t = 10 ms 1W p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5 Nm d (10-32 UNF) 18-22 lb.in. Weight 50 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 3VHF 15 Symbol Test Conditions Characteristic Values 10 1: I , T = 125C GT VJ I , I V = V V = V T = T 5mA R D R RRM D DRM VJ VJM 2: I , T = 25C GT VJ V T = 25 C 0.3 mA VJ 3: I , T = -40C GT VJ V G V , V I , I = 45 A T = 25 C 2.8 V T F T F VJ V For power-loss calculations only (T = 125 C) 1.0 V T0 VJ 3 r 40 m T 2 1 6 1 V V = 6 V T = 25 C 1.0 V GT D VJ 5 T = -40 C 1.2 V VJ 4 I V = 6 V T = 25 C 65 mA GT D VJ T = -40 C 80 mA VJ T = 125 C 50 mA VJ 4: P = 0.5 W GAV V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM 5: P = 1 W GM I T = T V = 2/3 V 5mA GD VJ VJM D DRM I , T = 125C 6: P = 10 W GD VJ GM 0.1 I I = 0.3 A t = 30 s T = 25 C 150 mA 1 10 100 1000 L G G VJ mA di /dt = 0.3 A/ s T = -40 C 200 mA I G VJ G T = 125 C 100 mA VJ Fig. 1 Gate trigger range I T = 25 C V = 6 V R = 100 mA H VJ D GK 1000 t T = 25 C V = 1/2 V 2 s gd VJ D DRM T = 25C VJ I = 0.3 A di /dt = 0.3 A/ s G G s t T = 125 C, I = 15 A, t = 300 s, V = 100 V typ. 150 s q VJ T P R t gd Q di/dt = -10 A/ s, dv/dt = 20 V/ s, V = 2/3 V 75 C r D DRM typ. Limit 100 R per thyristor (diode) DC current 2.4 K/W thJC per module 0.6 K/W R per thyristor (diode) DC current 3.0 K/W thJK per module 0.75 K/W d Creepage distance on surface 12.6 mm S 10 d Creepage distance in air 6.3 mm A 2 a Max. allowable acceleration 50 m/s 1 10 100 1000 mA I G Fig. 2 Gate controlled delay time t gd 2000 IXYS All rights reserved 2 - 3 750