VHF 25 Single Phase Rectifier Bridge I = 32 A dAV V = 600-1200 V RRM Preliminary data K V V Type RSM RRM G A V V DSM DRM H VV N 700 600 VHF 25-06io7 900 800 VHF 25-08io7 1300 1200 VHF 25-12io7 D Features Symbol Test Conditions Maximum Ratings I T = 85C, module 32 A dAV C Package with DCB ceramic base plate I /I T = 85 C (180 sine per thyristor) 16 A TAVM FAVM C Isolation voltage 3000 V~ I /I T = 45 C t = 10 ms (50 Hz), sine 200 A Planar passivated chips TSM FSM VJ Low forward voltage drop V = 0 t = 8.3 ms (60 Hz), sine 210 A R Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 180 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 190 A R Applications 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 200 A s VJ Supply for DC power equipment 2 V = 0 t = 8.3 ms (60 Hz), sine 150 A s DC motor control R 2 T = T t = 10 ms (50 Hz), sine 160 A s VJ VJM 2 Advantages V = 0 t = 8.3 ms (60 Hz), sine 150 A s R (di/dt) T = T repetitive, I = 20 A 100 A/ s cr VJ VJM T Easy to mount with two screws f =50 Hz, t =200 s P Space and weight savings V = 2/3 V D DRM Improved temperature and power I = 0.15 A non repetitive, I = I 500 A/ s G T TAVM cycling capability di /dt = 0.15 A/ s G Small and light weight (dv/dt) T = T V = 2/3 V 500 V/ s cr VJ VJM DR DRM R = method 1 (linear voltage rise) GK V 10 V RGM P T = T t = 30 s 5W GM VJ VJM p I = I t = 300 s 2.5 W T TAVM p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL I 1 mA t = 1 s 3000 V~ ISOL M Mounting torque (M4) 1.5 - 2 Nm d 14 - 18 lb.in. Weight typ. 18 g Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 2 002VHF 25 Symbol Test Conditions Characteristic Values I , I T = T V = V V = V 5mA D R VJ VJM R RRM D DRM V I = 20 A T = 25 C 1.6 V T T VJ V For power-loss calculations only (T = 125 C) 0.85 V T0 VJ r 27 m T V V = 6 V T = 25 C 1.5 V GT D VJ T = -40 C 2.5 V VJ I V = 6 V T = 25 C 25 mA GT D VJ T = -40 C 50 mA VJ V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM I 3mA GD I T = 25 C t = 10 s 75 mA L VJ P I = 0.1 A di /dt = 0.1 A/ s G G I T = 25 C V = 6 V R = 50 mA H VJ D GK t T = 25 C V = 1/2 V 2 s gd VJ D DRM I = 0.1 A di /dt = 0.1 A/ s G G R per thyristor DC 1.3 K/W thJC per module 0.22 K/W R per thyristor DC 1.8 K/W thJK per module 0.3 K/W d Creeping distance on surface 11.2 mm S d Creepage distance in air 9.5 mm A 2 a Max. allowable acceleration 50 m/s Dimensions in mm (1 mm = 0.0394 ) 2000 IXYS All rights reserved 2 - 2 002