VHFD 37 V = 800-1600 V Half Controlled RRM I = 40 A dAVM Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes V V Type 5 RSM RRM 3 2 V V 1 DSM DRM VV 900 800 VHFD 37-08io1 1300 1200 VHFD 37-12io1 1700 1600 VHFD 37-16io1 10 8 6 Bridge and Freewheeling Diode Symbol Conditions Maximum Ratings Features Package with DCB ceramic base plate I T = 85C, module 36 A dAV H Isolation voltage 3600 V~ I module 40 A dAVM Planar passivated chips I , I per leg 31 A FRMS TRMS Blocking voltage up to 1600 V I , I T = 45C t = 10 ms (50 Hz), sine 320 A Low forward voltage drop FSM TSM VJ V = 0 V t = 8.3 ms (60 Hz), sine 350 A Leads suitable for PC board soldering R UL registered E 72873 T = T t = 10 ms (50 Hz), sine 280 A VJ VJM V = 0 V t = 8.3 ms (60 Hz), sine 310 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 500 A s VJ Supply for DC power equipment 2 V = 0 V t = 8.3 ms (60 Hz), sine 520 A s R DC motor control 2 T = T t = 10 ms (50 Hz), sine 390 A s VJ VJM 2 Advantages V = 0 V t = 8.3 ms (60 Hz), sine 400 A s R Easy to mount with two screws (di/dt) T = 125C repetitive, I = 50 A 150 A/s cr VJ T Space and weight savings f = 50 Hz, t = 200 s P Improved temperature and power V = 2/3 V D DRM cycling I = 0.3 A, non repetitive, I = 0.5 I 500 A/s G T dAV di /dt = 0.3 A/s G Dimensions in mm (1 mm = 0.0394 ) (dv/dt) T = T V = 2/3 V 1000 V/s cr VJ (vj)m DR DRM R = method 1 (linear voltage rise) GK V 10 V RGM P T = T t = 30 s 10 W GM VJ VJM p I = 0.5 I t = 500 s 5W T dAVM p t = 10 ms 1W p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL d Creep distance on surface 12.7 mm S d Strike distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s M Mounting torque (M5) 2-2.5 Nm d (10-32 UNF) 18-22 lb.in. Weight 35 g IXYS reserves the right to change limits, test conditions and dimensions. 20100705a 2010 IXYS All rights reserved 1 - 3VHFD 37 Symbol Conditions Characteristic Values 10 1: I , T = 125C GT VJ I , I V = V V = V T = T 5mA R D R RRM D DRM VJ VJM 2: I , T = 25C GT VJ V T = 25C 0.3 mA VJ 3: I , T = -40C GT VJ V G V , V I , I = 45 A T = 25C 1.45 V T F T F VJ V For power-loss calculations only (T = 125C) 0.85 V T0 VJ 3 r 13 m T 2 1 6 1 V V = 6 V T = 25C 1.0 V GT D VJ 5 T = -40C 1.2 V VJ 4 I V = 6 V T = 25C 65 mA GT D VJ T = -40C 80 mA VJ T = 125C 50 mA VJ 4: P = 0.5 W GAV V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM 5: P = 1 W GM I T = T V = 2/3 V 5mA GD VJ VJM D DRM I , T = 125C 6: P = 10 W GD VJ GM 0.1 I I = 0.3 A t = 30 s T = 25C 150 mA L G G VJ 1 10 100 1000 mA di /dt = 0.3 A/s T = -40C 200 mA I G VJ G T = 125C 100 mA VJ Fig. 1 Gate trigger range I T = 25C V = 6 V R = 100 mA H VJ D GK 1000 t T = 25C V = 1/2 V 2 s gd VJ D DRM T = 25C VJ I = 0.3 A di /dt = 0.3 A/s G G s t T = 125C, I = 15 A, t = 300 s, V = 100 V typ. 150 s q VJ T P R t gd Q di/dt = -10 A/s, dv/dt = 20 V/s, V = 2/3 V 75 C r D DRM typ. Limit 100 R per thyristor (diode) DC current 1.2 K/W thJC per module 0.3 K/W R per thyristor (diode) DC current 1.55 K/W thJH per module 0.39 K/W 10 Field Diodes Symbol Conditions Maximum Ratings I T = 85C, per Diode 4 A FAV H 1 I per diode 4 A FAVM 10 100 1000 mA I per diode 6 A I FRMS G I T = 45C t = 10 ms (50 Hz), sine 100 A FSM VJ Fig. 2 Gate controlled delay time t gd V = 0 V t = 8.3 ms (60 Hz), sine 110 A R T = T t = 10 ms (50 Hz), sine 85 A VJ VJM V = 0 V t = 8.3 ms (60 Hz), sine 94 A R 2 2 I t T = 45C t = 10 ms (50 Hz), sine 50 A s VJ 2 V = 0 V t = 8.3 ms (60 Hz), sine 50 A s R 2 T = T t = 10 ms (50 Hz), sine 36 A s VJ VJM 2 V = 0 V t = 8.3 ms (60 Hz), sine 37 A s R I V = V T = T 1mA R R RRM VJ VJM T = 25C 0.15 mA VJ V I = 21 A T = 25C 1.83 V F F VJ V For power-loss calculations only (T = 125C) 0.9 V T0 VJ r 50 m T R per diode DC current 4.4 K/W thJC R per diode DC current 5.2 K/W thJH Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. 20100705a 2010 IXYS All rights reserved 2 - 3