VUC 36 I=39A Three Phase dAVM I=31A TAVM Rectifier Bridge V = 1200/1600 V with Fast Diodes andSoftstar Thyristor RRM 4 3 2 2 4 1 8 V V Type RSM RRM 7 6 5 VV 1 6 1300 1200 VUC 36-12go2 7 3 1700 1600 VUC 36-16go2 5 8 Symbol Conditions Maximum Ratings Features Diode Thyristor Package with DCB ceramic base plate Isolation voltage 3600 V~ I T = 85C, module 34 - A dAV K Planar passivated chips I module 39 - A dAVM Fast recovery diodes to reduce EMI I T = 85C, DC - 31 A TAVM K Separate thyristor for softstart Solderable terminals I , I T = 45C t = 10 ms (50 Hz), sine 300 400 A FSM TSM VJ UL registered E 72873 V = 0 t = 8.3 ms (60 Hz), sine 330 440 A R T = T t = 10 ms (50 Hz), sine 270 360 A Applications VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 300 400 A Input rectifier for switching power R supplies (SMPS) 2 2 I t T = 45C t = 10 ms (50 Hz), sine 450 800 A s VJ Softstart capacitor charging 2 V = 0 t = 8.3 ms (60 Hz), sine 460 810 A s R Electric drives and auxiliaries 2 T = T t = 10 ms (50 Hz), sine 365 650 A s VJ VJM 2 Advantages V = 0 t = 8.3 ms (60 Hz), sine 380 670 A s R Easy to mount with two screws (di/dt) T = T repetitive, I = 50 A 150 A/s cr VJ VJM T Space and weight savings f = 400 Hz, t = 200 s P Improved temperature & power cycling 2 V = / V D 3 DRM Up to 10 dB lower EMI/RFI I = 0.3 A non repetitive, I = I 500 A/s G T TAVM compared to standard rectifier di /dt = 0.3 A/s G 2 (dv/dt) T = T V = / V 200 V/s cr VJ VJM DR 3 DRM R = method 1 (linear voltage rise) GK V 10 V Dimensions in mm (1 mm = 0.0394 ) RGM P T = T t = 30 s <10 W GM VJ VJM p I = I t = 10 ms <1 W T TAVM p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I < 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5 Nm d (10-32 UNF) 18-22 lb.in. Weight typ. 28 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. 20100709b 2010 IXYS All rights reserved 1 - 2VUC 36 VUC 36 Symbol Conditions Characteristic Values Diode Thyristor I , I V = V V = V T = T <5<5mA R D R RRM D DRM VJ VJM T = 25C < 0.3 < 0.3 mA VJ V , V I = 55 A I = 45 A T = 25C <1.85 < 1.4 V F T F T VJ V For power-loss calculations only 1.2 0.85 V T0 r T = 125C 16 10 m T VJ V V = 6 V T = 25C < 1.5 V GT D VJ I V = 6 V T = 25C <80mA GT D VJ 2 V V = / V T = T < 0.2 V GD D 3 DRM VJ VJM 2 I V = / V T = T <5mA GD D 3 DRM VJ VJM I t = 30 s I = 0.3 A T = 25C < 300 mA L G G VJ di /dt = 0.3 A/s G I V = 6 V R = T = 25C < 100 mA H D GK VJ t V = V I = 0.3 A T = 25C < 2.5 s gd D DRM G VJ di /dt = 0.3 A/s G t I = 15 A t = 300 s -di/dt = 10 A/s T = 125C typ. 130 s q T p VJ 2 V = 100 V dv/dt = 20 V/s V = / V R D 3 DRM t I = 10 A V = V T = 25C < 1.5 - s rr F R RRM VJ -di/dt = 10 A/s R per thyristor (diode) DC current 1.4 0.9 K/W thJC per module 0.233 - K/W R per thyristor (diode) DC current 2.0 1.1 K/W thJH per module 0.333 - K/W d Creeping distance on surface 7 mm S d Creepage distance in air 7 mm A 2 a Max. allowable acceleration 50 m/s IXYS reserves the right to change limits, test conditions and dimensions. 20100709b 2010 IXYS All rights reserved 2 - 2