VUE 130-12NO7 I = 130 A Three Phase Rectifier Bridge dAV V = 1200 V RRM with Fast Recovery Epitaxial Diodes (FRED) t = 40 ns rr in ECO-PAC 2 Preliminary data sheet PS18 V V Typ RSM RRM V V ~ A 1 ~ L 9 ~ K10 1300 1200 VUE 130-12NO7 EG 1 Pin arangement see outlines B3 Symbol Conditions Maximum Ratings Features Package with DCB ceramic I T = 70C, module 130 A dAV C base plate in low profile I 90 A dAVM Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz), sine 500 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 525 A R Low forward voltage drop Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 415 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 440 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 1250 A s VJ Supplies for DC power equipment 2 V = 0 t = 8.3 ms (60 Hz), sine 1160 A s R Input and output rectifiers for high 2 frequency T = T t = 10 ms (50 Hz), sine 860 A s VJ VJM 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 820 A s R Field supply for DC motors T -40...+150 C VJ T 150 C VJM Advantages T -40...+125 C stg Space and weight savings V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL Improved temperature and power I 1 mA t = 1 s 3600 V~ ISOL cycling capability Small and light weight M Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. d Low noise switching Weight typ. 24 g Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394 ) typ. max. I V = V T = 25C 1 mA R R RRM VJ V = V T = T 2.5 mA R RRM VJ VJM V I = 60 A T = 25C 2.7 V F F VJ V for power-loss calculations only 1.07 V T0 r 8.2 m T R per diode DC current 0.8 K/W thJC R per diode, DC current, typ. 0.2 K/W thCH I I = 130 A, -diF/dt = 100 A/s 7 15 A RM F V = 100 V, T = 100C R VJ t I = 1 A -di/dt = 300 A/s V = 30 V, T = 25C 40 ns rr F R VJ 2 a Max. allowable acceleration 50 m/s d creeping distance on surface (pin to heatsink) 11.2 mm S d strike distance in air (pin to heatsink) 9.7 mm A Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 2002 IXYS All rights reserved 1 - 2 241VUE 130-12NO7 100 10 100 T = 100C T = 100C VJ VJ C A A V = 600 V V = 600 V R R 80 8 80 Q r I RM I T = 150C F I = 30 A VJ F I = 30 A T = 100C VJ F I = 15 A F 60 6 60 T = 25C I = 15 A VJ F I = 7.5 A F I = 7.5 A F 40 4 40 20 2 20 DWLP55-12 DWLP55-12 DWLP55-12 0 0 0 B3 01 23V 100 A/ s 1000 0 200 400 600 A/800s 1000 V -di /dt -di /dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2,0 280 120 1,2 T = 100C T = 100C VJ VJ t ns fr V = 600 V V = 15 A R R V s V V FR t FR t 1,5 rr fr K f 240 80 0,8 I = 30 A F I = 15 A F 1,0 I = 7.5 A F I RM 200 40 0,4 0,5 Q r DWLP55-12 DWLP55-12 DWLP55-12 0,0 160 0 0,0 040 80 120 160 0420000 600800 1000 0 200 400 600 A/800s 1000 C A/ s di /dt T -di /dt F VJ F Fig. 4 Dynamic parameters Q , I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 1 K/W Z thJC 0,1 VUE130-12 0,01 s 0,0001 0,001 0,01 0,1 1 10 t Fig. 7 Typical transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values IXYS reserves the right to change limits, test conditions and dimensions. 2002 IXYS All rights reserved 2 - 2 241