VUM33-06PH IXYS

VUM 33-06PH Single Phase Power MOSFET Stage Boost Diode MOSFET Rectifier for Boost Converters V = 1600 V V = 600 V V = 600 V RRM RRM DSS I = 106 A I = 60 A I = 50 A DAV F25 D25 Module for Power Factor Correction I = 300 A V = 2.24 V R = 120 m FSM F (30A) DS(on) Part name (Marking on product) VUM33-06PH 4 2 4 6 3 2 1 D D1 D3 1 3 D2 D4 DT T 8 7 6 5 5 8 7 Features: Advantages: Package: Package with DCB ceramic base plate 3 functions in one package V1-Pac standard outline Soldering connections for PCB Output power up to 8 kW Insulated copper base plate mounting No external isolation Isolation voltage 3600 V~ Easy to mount with two screws Application: Low R Polar MOSFET Suitable for wave soldering DS(on) Power factor pre-conditioner for Low package inductance for high High temperature and power SMPS, UPS, battery chargers and speed switching cycling capability inverters SONIC boost diode Fits easily to all available PFC Boost topology for SMPS including - fast and soft reverse recovery controller ICs 1~ rectifier bridge - low operating forward voltage Power supply for welding equipment IXYS reserves the right to change limits, test conditions and dimensions. 20100921b 2010 IXYS All rights reserved 1 - 8VUM 33-06PH MOSFET T Ratings Symbol Definitions Conditions min. typ. max. Unit drain source voltage V T = 25C 600 V DSS VJ max. DC gate voltage V continuous 20 V GSS V max. transient gate source voltage transient 30 V GSM I drain current T = 25C 50 A D25 C I T = 80C 37 A D80 C total power dissipation P T = 80C 500 W tot C drain source on resistance R I = 30 A V = 10 V T = 25C 120 m DS(on) D GE VJ T = 125C 240 m VJ gate source threshold voltage V I = 8 mA V = V T = 25C 2.5 5.0 V GS(th) C DS GS VJ drain source leakage current I V = V V = 0 V T = 25C 50 A DSS DS DSS GS VJ T = 125C 500 A VJ gate source leakage current I V = 20 V V = 0 V 500 nA GSS GS DS input capacitance C V = 25 V V = 0 V f = 1 MHz 8.0 nF iss DS GS total gate charge Q V = 300 V V = 10 V I = 50 A 165 nC G(on) DS GS D turn-on delay time t 56 ns d(on) t current rise time inductive load T = 25C 12 ns r VJ t turn-off delay time V = 380 V I = 20 A 110 ns d(off) DS D current fall time t V = 0/10 V R = 4.7 W 12 ns f GS G 1) turn-on energy per pulse E R = 5.5 W 0.3 mJ on G eff turn-off energy per pulse E 0.16 mJ off turn-on delay time t 56 ns d(on) t current rise time inductive load T = 125C 16 ns r VJ turn-off delay time t V = 380 V I = 20 A 144 ns d(off) DS D current fall time t V = 0/10 V R = 4.7 W 14 ns f GS G 1) turn-on energy per pulse E R = 5.5 W 0.47 mJ on G eff turn-off energy per pulse E 0.20 mJ off thermal resistance junction to case R 0.14 K/W thJC R thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 0.18 0.24 K/W thJH 1) R includes the driver resistance of 0.8 W G eff IXYS reserves the right to change limits, test conditions and dimensions. 20100921b 2010 IXYS All rights reserved 2 - 8