VUM 85-05A V = 500 V Rectifier Module DSS I = 130 A D25 for Three Phase Power Factor Correction R = 36 m DS(on) Preliminary data V V V Type RRM RRM, DRM DSS (FAST Diode) (Diode, Thyr.) (MOSFET) VV V 600 500 500 VUM 85-05A E 72873 Symbol Conditions Maximum Ratings Features MOSFET T 1 Package with DCB ceramic base plate V T = 25C to 150C 500 V DSS VJ Soldering connections for PCB mounting V T = 25C to 150C R = 1 M 500 V DGR VJ G Isolation voltage 3600 V~ V Transient 30 V GSM TM Low R HDMOS process DS(on) V Continuous 20 V GS Low package inductance for high speed I T = 100C, T = 125C60A switching D C VJ I T = 25C, T = 150C 130 A Ultrafast diodes D25 C VJ I T = 25C, T = 150C 520 A Kelvin source for easy drive DM C VJ UL recognized E T = 25C60mJ AR C P T = 25C 1380 W tot C Applications Single Phase Bridge Th1, D2, D3, D4 V ,V 500 V RRM DRM Three phase PFC by Kolar circuit I T = 150C, T = 100C47A Three phase input rectifier with power DAV VJ C factor correction consisting of three I , I T = 45C, t = 10 ms (50 Hz) 320 A FSM TSM VJ modules VUM 85-05 t = 8.3 ms (60 Hz) 340 A For power supplies, UPS, SMPS, drives, T = 150C,t = 10 ms (50 Hz) 280 A welding etc. VJ t = 8.3 ms (60 Hz) 300 A P T = 25C per diode 90 tot C Advantages W Fast Diodes D5, D6 Reduced harmonic content of input currents corresponding to standards V 600 V RRM Rectifier generates maximum DC po- I T = 150C, T = 100C, rectangular = 0.5 31 A FAV VJ C wer with a given AC fuse Wide input voltage range I T = 45C, t = 10 ms (50 Hz) 250 A FSM VJ No external isolation P T = 25C95W tot C Easy to mount with two screws Module Suitable for wave soldering High temperature and power cycling T -40...+150 C VJ capability T 150 C JM T -40...+125 C stg V I 1 mA 50/60 Hz 3600 V~ ISOL ISOL M Mounting torque (M5) 2-2.5/18-22 Nm/lb.in. d Weight 80 g 2006 IXYS All rights reserved 1 - 3 0627VUM 85-05A Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. MOSFET T 1 V V = 20 V, I = 30 mA 2 3 4 V GS(th) DS D I V = 20 V, V = 0 V 1.5 A GSS GS DS I V = V ,V = 0 V 0.5 1.4 mA DSS DS DSS GS V = 0,8V ,V = 0 V, T = 125C17mA DS DSS GS VJ R I = I , V = 10 V, pulse test 36 m DS(on) D D25 GS t 300 s, d 2% g V = 10 V, I = I , t = < 300 s 75 145 S fs DS D D25 t 16 25 ns d(on) t 33 45 ns r V = V , I = I , V = 15 V DSS D25 DS D GS t 65 80 ns d(off) R = 1 , L = 100 H, T = 125C VJ G t 30 40 ns f C 30 nF iss V = 25 V, f = 1 MHz, V = 0 V C 3nF oss DS GS C 1nF rss Q 945 1120 nC g Q V = V , I = I , V = 15 V 195 280 nC gs DS DSS D D25 GS Q 435 595 nC g R 0.09 K/W thJC R 0.05 K/W thCH Single Phase Bridge Th1, D2, D3, D4 V , V I , I = 45 A, T =25C 1.50 V F T F T VJ T =125C 1.55 V VJ I , I V , V = V , V,T = 25C 0.5 1.4 mA RRM DRM D R DRM RRM VJ V , V = 0,8V , V ,T = 125C17mA D R DRM RRM VJ V For power-loss calculations only 0.85 V T0 r T = 150C14m T VJ V V = 6 V 1.5 V GT D I 100 mA GT 2 V V = / V ,T = 150C 0.2 V GD D 3 DRM VJ I 5mA GD V 10 V RGM I V = 6 V, R = oo 200 mA H D GK I I = 0.45 A, di /dt = 0.45 A/s, t = 10 s 450 mA L G G p (di/dt) I = 0.45A, di /dt = 0.45A/s, t = 200s, f = 50Hz cr G G p 2 V = / V , T = 150C, I = 45 A, repetitive 150 A/s D 3 DRM VJ T I = 0.45A, di /dt = 0.45A/s, t = 200s, f = 50Hz G G p 2 V = / V , T = 150C, I = I , non-repetitive 500 A/s D 3 DRM VJ T DAV t I = 0.45 A, di /dt = 0.45 A/s, V = V 2s gd G G D DRM 2 t I = 20 A, di/dt = -10 A/s, V = 100 V, V = / V 150 s q T R D 3 DRM t = 200 s, dv/dt = 15 V/s, T = 150C p VJ P I = I , T = 150Ct = 30 s 10 W GM T d(AV) VJ p t = 300 s 5 W p P 0,5 W GAVM R DC per diode / thyristor 1.3 K/W thJC R DC per diode / thyristor 0.4 K/W thCH 2006 IXYS All rights reserved 2 - 3 0627