VUO160-12NO7 3~ Standard Rectifier Module Rectifier V = 1200 V RRM I 175 A = DAV A I = 1800 FSM 3~ Rectifier Bridge Part number VUO160-12NO7 A+ D1 D3 D5 E~ D~ C~ D2 D4 D6 B - Features / Advantages: Applications: Package: PWS-E Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 3000 Improved temperature and power cycling For three phase bridge configurations Industry standard outline Planar passivated chips Supplies for DC power equipment RoHS compliant Very low forward voltage drop Input rectifiers for PWM inverter Easy to mount with two screws Very low leakage current Battery DC power supplies Base plate: Copper Field supply for DC motors internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b 2019 IXYS all rights reservedVUO160-12NO7 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1300 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1200 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 2 0 0 V T = 25C 200 A R VJ R V = 1 2 0 0 V T = 1 5 0 C 2 mA R VJ forward voltage drop V I = 6 0 A T = 25C 1.10 V F F VJ I = 1 8 0 A 1.40 V F T = C 1.00 V I = 6 0 A 125 F VJ I = 1 8 0 A 1.39 V F bridge output current T = 1 1 0 C T = 1 5 0 C 175 A I DAV C VJ rectangular d = V T = 1 5 0 C 0.77 V threshold voltage F0 VJ for power loss calculation only slope resistance r 3.4 m F thermal resistance junction to case 0.5 K/W R thJC thermal resistance case to heatsink 0.2 K/W R thCH P total power dissipation T = 25C 250 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 1.80 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.95 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 1.53 VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.65 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 16.2 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 15.7 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 11.7 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 11.3 kAs R V = 4 0 0 V f = 1 MHz T = 25C 35 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220b 2019 IXYS all rights reserved