VUO 16 I = 20 A Three Phase dAVM V = 800-1800 V RRM Rectifier Bridge 5 4 1/2 V V Type 2 RSM RRM 1 VV 10 8 900 800 VUO 16-08NO1 6 1300 1200 VUO 16-12NO1 10 1500 1400 VUO 16-14NO1 8 4/5 6 1700 1600 VUO 16-16NO1 1900 1800 VUO 16-18NO1 Symbol Test Conditions Maximum Ratings Features Package with DCB ceramic base plate I T = 90 C, module 15 A dAV K Isolation voltage 3600 V~ I T = 45 C (R = 0.5 K/W), module 20 A dAV A thKA Planar passivated chips I module 20 A dAVM Blocking voltage up to 1800 V Low forward voltage drop I T = 45 C t = 10 ms (50 Hz), sine 100 A FSM VJ Leads suitable for PC board soldering V = 0 t = 8.3 ms (60 Hz), sine 106 A R T = T t = 10 ms (50 Hz), sine 85 A VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 90 A R Applications 2 2 Supplies for DC power equipment I t T = 45 C t = 10 ms (50 Hz), sine 50 A s VJ 2 Input rectifiers for PWM inverter V = 0 t = 8.3 ms (60 Hz), sine 47 A s R Battery DC power supplies 2 T = T t = 10 ms (50 Hz), sine 36 A s Field supply for DC motors VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 33 A s R Advantages T -40...+130 C VJ Easy to mount with two screws T 130 C VJM Space and weight savings T -40...+125 C stg Improved temperature and power V 50/60 Hz, RMS t = 1 min 3000 V~ cycling ISOL I 1 mA t = 1 s 3600 V~ ISOL Dimensions in mm (1 mm = 0.0394 ) M Mounting torque (M5) 2 - 2.5 Nm d (10-32UNF) 18-22 lb.in. Weight typ. 35 g Symbol Test Conditions Characteristic Values I V = V T = 25 C 0.3 mA R R RRM VJ V = V T = T 5mA R RRM VJ VJM V I = 7 A T = 25 C 1.15 V F F VJ V For power-loss calculations only 0.8 V T0 r 50 m T R per diode, 120 rect. 4.5 K/W thJH per module, 120 rect. 0.75 K/W d Creeping distance on surface 12.7 mm S d Creepage distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 2VUO 16 30 100 100 50 Hz A 0.8 x V A RRM 2 I A s I FSM F 25 2d I t 80 T = 25C VJ T = 130C VJ 20 T = 45C T = 45C VJ VJ 60 max. 15 40 typ. 10 T = 130C VJ T = 130C VJ 20 5 0 0 10 -3 -2 -1 0 0.00.5 1.01.5 2.02.5 10 10 10 s 1011ms0 V t t V F 2 Fig. 1 Forward current versus voltage Fig. 2 Surge overload current per diode Fig. 3 I t versus time (1-10 ms) drop per diode I : Crest value. t:duration per diode FSM 80 25 P tot W A R K/W thKA I dAVM 70 0.5 1 20 1.5 60 2 3 50 4 15 6 40 10 30 20 5 10 0 0 0 5 10 15 20 25 0 255075 100 125 150 0 255075 100 125 150 A C C T I K dAVM T A Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at heatsink temperature T K 5 Zth JK K/W Zth JK 4 3 Constants for Z calculation: thJK 2 iR (K/W) t (s) th i 1 0.015 0.008 1 2 0.1 0.02 3 1.835 0.05 4 2.55 0.4 0 -3 -2 -1 0 1 2 s 10 10 10 10 10 10 t Fig. 6 Transient thermal impedance junction to heatsink per diode 2000 IXYS All rights reserved 2 - 2