VUO25-08NO8 3~ Standard Rectifier Module Rectifier V = 800 V RRM I 20 A = DAV A I = 380 FSM 3~ Rectifier Bridge Part number VUO25-08NO8 + D1 D3 D5 ~ ~ ~ D2 D4 D6 - Features / Advantages: Applications: Package: FO-B Planar passivated chips Diode for main rectification Isolation Voltage: V~ 3000 Very low leakage current For three phase bridge configurations Industry standard outline Very low forward voltage drop Supplies for DC power equipment RoHS compliant Improved thermal behaviour Input rectifiers for PWM inverter fast-on terminals Battery DC power supplies Easy to mount with one screw Field supply for DC motors Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c 2019 IXYS all rights reservedVUO25-08NO8 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 8 0 0 V T = 25C 40 A R VJ R V = 8 0 0 V T = 1 5 0 C 1.5 mA R VJ forward voltage drop V I = 1 0 A T = 25C 1.05 V F F VJ I = 3 0 A 1.25 V F T = C 0.94 V I = 1 0 A 125 F VJ I = 3 0 A 1.21 V F bridge output current T = 8 5 C T = 1 5 0 C 20 A I DAV C VJ rectangular d = V T = 1 5 0 C 0.77 V threshold voltage F0 VJ for power loss calculation only slope resistance r 14.2 m F thermal resistance junction to case 8 K/W R thJC thermal resistance case to heatsink 1 K/W R thCH P total power dissipation T = 25C 15 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 380 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 410 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 325 VJ t = 8,3 ms (60 Hz), sine V = 0 V 350 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 720 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 700 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 530 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 510 As R V = 4 0 0 V f = 1 MHz T = 25C 10 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c 2019 IXYS all rights reserved