VUO70-16NO7 IXYS

VUO 70-16NO7 I = 70 A Three Phase dAV V = 1600 V Recti er Bridge RRM A V V Types RSM RRM V V E D 1700 1600 VUO 70-16NO7 C B Symbol Conditions Maximum Ratings Features I T = 100C, module (for resistive load at bridge output) 70 A Package with copper base plate dAV C Isolation voltage 3000 V~ I T = 45C t = 10 ms (50 Hz), sine 550 A FSM VJ Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 600 A R Low forward voltage drop T = T t = 10 ms (50 Hz), sine 500 A fast-on power terminals VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 550 A R Applications 2 2 I t T = 45C t = 10 ms (50 Hz), sine 1520 A s VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 1520 A s Supplies for DC power equipment R 2 Input recti ers for PWM inverter T = T t = 10 ms (50 Hz), sine 1250 A s VJ VJM 2 Battery DC power supplies V = 0 t = 8.3 ms (60 Hz), sine 1250 A s R Field supply for DC motors T -40...+150 C VJ T 150 C Advantages VJM T -40...+125 C stg Easy to mount with two screws V 50/60 Hz, RMS t = 1 min 2500 V~ Space and weight savings ISOL I 1 mA t = 1 s 3000 V~ Improved temperature and power ISOL cycling capability M Mounting torque (M5) 5 15% Nm d Small and light weight (10-32 UNF) 44 15% lb.in. Weight typ. 110 g Symbol Conditions Characteristic Values I V = V T = 25C < 0.5 mA R R RRM VJ Dimensions in mm (1 mm = 0.0394 ) V = V T = T < 10 mA R RRM VJ VJM V I = 150 A T = 25C < 1.7 V F F VJ V For power-loss calculations only 0.8 V T0 r 8 m T R per diode DC current 1.45 K/W thJC per module 0.242 K/W R per diode, DC current 1.9 K/W thJH per module 0.317 K/W d Creeping distance on surface 16.1 mm S d Creepage distance in air 7.5 mm A 2 a Max. allowable acceleration 50 m/s Data according to IEC 60747 refer to a single diode unless otherwise stated Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. 20200625c 2020 IXYS All rights reserved 1 - 2 PHASE-OUTVUO 70-16NO7 4 10 30 I A 1.8 FSM T = 45C T = 150C VJ VJ 1.6 550 500 25 1.4 20 T = 150C 2 I I F FSM I t 1.2 T = 45C 3 10 15 2 A A A s T = 150C 1.0 10 0 V RRM 0.8 V T = 25C RRM 5 1 V RRM 0.6 0 2 0.4 10 0 1 2 3 0 1 1.5 10 10 10 10 1 2 4 6 10 V V t ms t ms F Fig. 1 Forward current vs. Fig. 2 Surge overload current 2 Fig. 3 I t vs. time (1-10 ms) voltage drop per diode per diode. t = duration per diode/thyristor I = Crest value FSM 200 DC 105 80 0.38 0.26 = R K/W thCA sin.180 175 110 rec.120 0.51 rec. 60 150 115 rec. 30 60 125 120 P T I 0.76 tot C dAV 125 100 40 W C A 130 75 1.26 DC 135 20 50 sin.180 140 rec.120 2.76 rec. 60 25 145 rec. 30 0 150 0 0 20 40 60 0 50 100 150 0 50 100 150 200 I A T C T C FAVM amb C Fig. 4 Power dissipation versus direct output current Fig.5 Max. forward current and ambient temperature at case temperature 3 Z 2 thJK Z th Z thJC K/W 1 0 0.01 0.1 1 10 t s Fig. 6 Transient thermal impedance per diode/thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 20200625c 2020 IXYS All rights reserved 2 - 2 PHASE-OUT