VVZ 110 VVZ 175 I = 110/167 A Three Phase Half Controlled dAVM V = 1200-1600 V Recti er Bridge, B6HK RRM E D ~ C V V Type A ~ RSM RRM 2 3 1 ~ V V DSM DRM V V E D 1300 1200 VVZ 110-12io7 VVZ 175-12io7 C 3 1700 1600 VVZ 175-16io7 B 2 A - 1 + B Symbol Test Conditions Maximum Ratings VVZ 110 VVZ 175 I T = 85C module 110 167 A dAV C I , I per leg 58 89 A FRMS TRMS Features I , I T = 45C t = 10 ms (50 Hz), sine 1150 1500 A FSM TSM VJ V = 0 t = 8.3 ms (60 Hz), sine 1230 1600 A R Package with screw terminals Isolation voltage 3000 V~ T = T t = 10 ms (50 Hz), sine 1000 1350 A VJ VJM Planar passivated chips V = 0 t = 8.3 ms (60 Hz), sine 1070 1450 A R UL registered E72873 2 2 I t T = 45C t = 10 ms (50 Hz), sine 6600 11200 A s VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 6280 10750 A s R 2 T = T t = 10 ms (50 Hz), sine 5000 9100 A s Applications VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 4750 8830 A s R Input recti er for PWM converter (di/dt) T = T repetitive, I = 50 A 150 A/s Input recti er for switch mode power cr VJ VJM T f =400 Hz, t =200 s supplies (SMPS) P V = 2/3 V Softstart capacitor charging D DRM I = 0.3 A, non repetitive, 500 A/s G di /dt = 0.3 A/s, I = 1/3 I G T dAV (dv/dt) T = T V = 2/3 V 1000 V/s Advantages cr VJ VJM DR DRM R = method 1 (linear voltage rise) GK Easy to mount with two screws V 10 V Space and weight savings RGM Improved temperature and power P T = T t = 30 s 10 W GM VJ VJM p cycling I = I t = 500 s 5 W T TAVM p t = 10 ms 1 W p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 2500 V~ ISOL I 1 mA t = 1 s 3000 V~ ISOL M Mounting torque (M6) 515 % Nm d Terminal connection torque (M6) 515 % Nm Data according to IEC 60747 and refer to a single Weight typ. 300 g thyristor/diode unless otherwise stated. Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. 20200117c 2020 IXYS All rights reserved 1 - 3VVZ 110 VVZ 175 Symbol Test Conditions Characteristic Values VVZ 110 VVZ 175 I , I V = V V = V T = T 5 mA R D R RRM D DRM VJ VJM T = 25C 0.3 mA VJ V , V I , I = 200 A, T = 25C 1.75 1.57 V F T F T VJ V For power-loss calculations only 0.85 0.85 V T0 r (T = 125C) 6 3.5 m T VJ V V = 6 V T = 25C 1.5 V GT D VJ T = -40C 1.6 V VJ I V = 6 V T = 25C 100 mA GT D VJ T = -40C 200 mA VJ 2 V T = T V = / V 0.2 V GD VJ VJM D 3 DRM 2 I T = T V = / V 5 mA GD VJ VJM D 3 DRM I I = 0.3 A t = 30 s T = 25C 450 mA L G G VJ di /dt = 0.3 A/s G I T = 25C V = 6 V R = 200 mA H VJ D GK t T = 25C V = V 2 s gd VJ D DRM I = 0.3 A di /dt = 0.3 A/s G G R per thyristor (diode) DC current 0.65 0.46 K/W thJC per module 0.108 0.077 K/W R per thyristor (diode) DC current 0.8 0.55 K/W thJH per module 0.133 0.092 K/W d Creeping distance on surface 10 mm S d Creepage distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s M6x12 Dimensions in mm (1 mm = 0.0394 ) 94 80 72 26 26 C ~ D ~ E ~ A + B - 3 4 2 5 1 6 7 12 25 2.8 x 0.8 66 M6 IXYS reserves the right to change limits, test conditions and dimensions. 20200117c 2020 IXYS All rights reserved 2 - 3 54 27 6.5 15 5 6 5 3 7 6.5 30