X-On Electronics has gained recognition as a prominent supplier of AA3528SF4S Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. AA3528SF4S Infrared Emitters are a product manufactured by Kingbright. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

AA3528SF4S Kingbright

AA3528SF4S electronic component of Kingbright
AA3528SF4S Kingbright
AA3528SF4S Infrared Emitters
AA3528SF4S  Optoelectronics

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Part No. AA3528SF4S
Manufacturer: Kingbright
Category: Infrared Emitters
Description: Infrared Emitters 3.5X2.8MM INFRARED SMD LED
Datasheet: AA3528SF4S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20000: USD 0.231 ea
Line Total: USD 4620 
Availability - 0
MOQ: 20000  Multiples: 20000
Pack Size: 20000
Availability Price Quantity
0
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 20000
Multiples : 20000
20000 : USD 0.231

   
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RoHS - XON
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We are delighted to provide the AA3528SF4S from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AA3528SF4S and other electronic components in the Infrared Emitters category and beyond.

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AA3528SF4S-R 3.5 x 2.8 mm Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 Halogen-free RoHS compliant APPLICATIONS Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE Po (mW/sr) 1 Viewing Angle 2 Emitting Color 20mA Part Number Lens Type (Material) Min. Typ. 21/2 AA3528SF4S-R Infrared (GaAlAs) Water Clear 1.2 2 120 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 4 2020 Kingbright. All Rights Reserved. Spec No: DSAL0870 / 1201007050 Rev No: V.8B Date: 12/30/2020 AA3528SF4S-R ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 20mA Infrared 880 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 20mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 20mA V Infrared 1.3 1.6 V F F Reverse Current (V = 5V) I Infrared - 10 A R R Temperature Coefficient of Wavelength TC Infrared 0.3 - nm/C I = 20mA, -10C T 85C F Temperature Coefficient of V F TC Infrared -1.3 - mV/C V I = 20mA, -10C T 85C F Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 85 mW D Reverse Voltage V 5 V R Junction Temperature T 125 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 50 mA F 1 Peak Forward Current I 1200 mA FM Electrostatic Discharge Threshold (HBM) 8000 V - 2 Thermal Resistance (Junction / Ambient) R 310 C/W th JA 2 Thermal Resistance (Junction / Solder point) R 200 C/W th JS Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2 2. R ,R Results from mounting on PC board FR4 (pad size 16 mm per pad). th JA th JS 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 4 2020 Kingbright. All Rights Reserved. Spec No: DSAL0870 / 1201007050 Rev No: V.8B Date: 12/30/2020

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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