AA4040SF4BT-P22 Kingbright

AA4040SF4BT-P22 4.0 x 4.0 mm Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES Suitable for all SMD assembly and solder process Mechanically and spectrally matched to the phototransistor Available on tape and reel Moisture sensitivity level: 4 Package: 2000 pcs / reel Halogen-free RoHS compliant APPLICATIONS Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE Po (mW/sr) 1 Viewing Angle 2 Emitting Color 100mA Part Number Lens Type (Material) Min. Typ. 21/2 AA4040SF4BT-P22 Infrared (GaAlAs) Blue Transparent 8 16 90 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAQ0358 / 1201004308 Rev No: V.1B Date: 11/01/2021 ConfidentialAA4040SF4BT-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 100mA Infrared 880 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 100mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 100mA V Infrared 1.65 2.3 V F F Reverse Current (V = 5V) I Infrared - 10 A R R Temperature Coefficient of Wavelength TC Infrared 0.3 - nm/C I = 100mA, -10C T 85C F Temperature Coefficient of V F TC Infrared -1.3 - mV/C V I = 100mA, -10C T 85C F Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 230 mW D Reverse Voltage V 5 V R Junction Temperature T 125 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 100 mA F 1 Peak Forward Current I 1200 mA FM Electrostatic Discharge Threshold (HBM) 8000 V - 2 Thermal Resistance (Junction / Ambient) R 390 C/W th JA 2 Thermal Resistance (Junction / Solder point) R 270 C/W th JS Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2 2. R ,R Results from mounting on PC board FR4 (pad size 16 mm per pad). th JA th JS 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAQ0358 / 1201004308 Rev No: V.1B Date: 11/01/2021 Confidential