AM2520P3BT09 Kingbright

AM2520P3BT09 Phototransistor DESCRIPTION PACKAGE DIMENSIONS z Made with NPN silicon phototransistor chips FEATURES z Subminiature package z Mechanically and spectrally matched to the infrared emitting LED lamp z Z-bend lead z Long life - solid state reliability z Low package profile z Moisture sensitivity level: 3 z Package: 1000 pcs / reel z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at(or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAF5544 / 1202000563 Rev No: V.4 Date: 08/03/2018 AM2520P3BT09 ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100uA C Collector-to-Emitter Breakdown Voltage V 30 - - V 2 BR CEO Ee = 0mW/cm I = 100uA E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 Ee = 0mW/cm I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V CE (SAT) 2 Ee = 20mW/cm V = 10V CE Collector Dark Current I - - 100 nA CEO 2 Ee = 0mW/cm Rise Time(10% to 90%) T - 15 - S R V = 5V CE I = 1mA C R = 1000 L Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.4 0.8 - mA Ee = 1mW/cm (ON ) = 940nm Range of spectral bandwidth 670 - 1070 nm - 0.1 Wavelength of peak Sensitivity - 940 - nm - p Angle of half sensitivity 21/2 - 20 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% -75 75 0% 600 700 800 900 1000 1100 1200 90 -90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAF5544 / 1202000563 Rev No: V.4 Date: 08/03/2018 Relative spectral sensitivity (a. u.) Relative sensitivity