X-On Electronics has gained recognition as a prominent supplier of AP1608SF4C Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. AP1608SF4C Infrared Emitters are a product manufactured by Kingbright. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

AP1608SF4C Kingbright

AP1608SF4C electronic component of Kingbright
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Part No.AP1608SF4C
Manufacturer: Kingbright
Category: Infrared Emitters
Description: Infrared Emitters 1.6X0.8MM IREMIT DIODE SMD
Datasheet: AP1608SF4C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20000: USD 0.2134 ea
Line Total: USD 4268 
Availability - 0
MOQ: 20000  Multiples: 20000
Pack Size: 20000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 20000
Multiples : 20000
20000 : USD 0.2134
40000 : USD 0.2123
60000 : USD 0.2112

   
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We are delighted to provide the AP1608SF4C from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AP1608SF4C and other electronic components in the Infrared Emitters category and beyond.

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AP1608SF4C 1.6 x 0.8 mm Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES 1.6 mm x 0.8 mm SMD LED, 1.1 mm thickness Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 Halogen-free RoHS compliant APPLICATIONS Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE Po (mW/sr) 1 Viewing Angle 2 Emitting Color 20mA Part Number Lens Type (Material) Min. Typ. 21/2 AP1608SF4C Infrared (GaAlAs) Water Clear 0.8 1.5 150 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 4 2020 Kingbright. All Rights Reserved. Spec No: DSAA8462 / 1203000062 Rev No: V.11B Date: 12/01/2020 AP1608SF4C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 20mA Infrared 880 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 20mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 20mA V Infrared 1.3 1.6 V F F Reverse Current (V = 5V) I Infrared - 10 A R R Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 85 mW D Reverse Voltage V 5 V R Junction Temperature T 125 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 50 mA F 1 Peak Forward Current I 1200 mA FM Electrostatic Discharge Threshold (HBM) 8000 V - Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 4 2020 Kingbright. All Rights Reserved. Spec No: DSAA8462 / 1203000062 Rev No: V.11B Date: 12/01/2020

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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