X-On Electronics has gained recognition as a prominent supplier of APHHS1005F3C-70MAV Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. APHHS1005F3C-70MAV Infrared Emitters - High Power are a product manufactured by Kingbright. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

APHHS1005F3C-70MAV Kingbright

APHHS1005F3C-70MAV electronic component of Kingbright
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Part No.APHHS1005F3C-70MAV
Manufacturer: Kingbright
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 1x0.5mm IR SMD
Datasheet: APHHS1005F3C-70MAV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7576 ea
Line Total: USD 0.76 
Availability - 1958
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1958
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7576
10 : USD 0.4981
100 : USD 0.3297
1000 : USD 0.2553
2000 : USD 0.2371
10000 : USD 0.2062
24000 : USD 0.2048
50000 : USD 0.2006

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Lens Shape
Viewing Angle
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APHHS1005F3C-70MAV from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APHHS1005F3C-70MAV and other electronic components in the Infrared Emitters - High Power category and beyond.

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APHHS1005F3C-70MAV 1.0 x 0.5 mm Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS z F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES z 1.0 mm x 0.5 mm SMD LED, 0.5 mm thickness z Mechanically and spectrally matched to the phototransistor z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared Illumination for cameras z Machine vision systems z Surveillance systems z Industrial electronics z IR data transmission z Remote control RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE 2 1 Po (mW/sr) 70mA Viewing Angle Emitting Color Part Number Lens Type (Material) Min. Typ. 21/2 5 8 APHHS1005F3C-70MAV Infrared (GaAs) Water Clear 140 *3 *5 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. * Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAP5187 / 1203015859 Rev No: V.1A Date: 06/26/2018 APHHS1005F3C-70MAV ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 70mA Infrared 940 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 70mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 70mA V Infrared 1.33 1.9 V F F Reverse Current (V = 5V) I Infrared - 10 uA R R Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 133 mW D Reverse Voltage V 5 V R Junction Temperature T 115 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 70 mA F 1 Peak Forward Current I 1200 mA FM Electrostatic Discharge Threshold (HBM) 8000 V - Notes: 1. 1/100 Duty Cycle, 10 s Pulse Width. 2. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAP5187 / 1203015859 Rev No: V.1A Date: 06/26/2018

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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