X-On Electronics has gained recognition as a prominent supplier of APT2012PD1C Photodiodes across the USA, India, Europe, Australia, and various other global locations. APT2012PD1C Photodiodes are a product manufactured by Kingbright. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

APT2012PD1C Kingbright

APT2012PD1C electronic component of Kingbright
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Part No.APT2012PD1C
Manufacturer: Kingbright
Category: Photodiodes
Description: Photodiodes 2x1.2mm PHOTODIODE
Datasheet: APT2012PD1C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.99 ea
Line Total: USD 0.99 
Availability - 4809
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4809
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.99
10 : USD 0.9427
100 : USD 0.6182
500 : USD 0.5874
1000 : USD 0.3256
2500 : USD 0.3069

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Photocurrent
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
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We are delighted to provide the APT2012PD1C from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2012PD1C and other electronic components in the Photodiodes category and beyond.

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APT2012PD1C 2.0 x 1.25 mm Photodiode DESCRIPTION PACKAGE DIMENSIONS z Made with NPN silicon photodiode chips FEATURES z 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Maximum Ratings Units Power Dissipation 150 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 3 2018 Kingbright. All Rights Reserved. Spec No: DSAA8348 / 1203001836 Rev No: V.6 Date: 08/09/2018 APT2012PD1C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100uA R Reverse Break down Voltage V 33 170 - V 2 (BR)R H = 0mW/cm V = 10V R Reverse Dark Current ID - - 10 nA (R) 2 H = 0mW/cm = 940nm Open Circuit Voltage V - 390 - mV OC 2 H = 5mW/cm Rise Time T - 6 - nS R V = 10V R = 940nm R = 1000 L Fall Time T - 6 - nS F V = 5V R 2 Light current I 4 8 - uA Ee = 0.08mW/cm S = 940nm V = 10V R Total Capacitance C - 5 - pF F = 1MHZ T 2 H = 0mW/cm Range of spectral bandwidth 420 - 1120 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p Angle of half sensitivity 21/2 - 160 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% 75 -75 0% 350 450 550 650 750 850 950 1050 1150 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 PHOTODIODE Light Current vs. Power Dissipation vs. Dark Current vs. Dark Current vs. Irradiance Ambient Temperature Reverse Voltage Ambient Temperature 1000 200 10 1000 VCE = 20V V =5V R T = 25 C a Ee = 0 T = 25 C a 100 150 100 1 10 100 10 0.1 1 50 1 0.1 0 0.01 0.1 1 10 100 1000 10000 0 20406080 100 0 5 10 15 20 25 30 025 50 75 100 2 Ambient temperature (C) Ambient temperature (C) Irradiance Ee (W/cm ) Reverse voltage V (V) R Page 2 / 3 2018 Kingbright. All Rights Reserved. Spec No: DSAA8348 / 1203001836 Rev No: V.6 Date: 08/09/2018 Relative spectral sensitivity (a. u.) Light current Is (A) Power dissipation Pd (mW ) Dark current (nA) Relative sensitivity Dark current (nA)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
KINGBRIGHT
Kingbright Company LLC
Kingbright Corp
Kingbright Corporation
KINGBRIGHT ELECTRONIC
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