X-On Electronics has gained recognition as a prominent supplier of APTD1608F3C Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. APTD1608F3C Infrared Emitters are a product manufactured by Kingbright. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

APTD1608F3C Kingbright

APTD1608F3C electronic component of Kingbright
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Part No.APTD1608F3C
Manufacturer: Kingbright
Category: Infrared Emitters
Description: Infrared Emitters 1.6x0.8mm IR SMD
Datasheet: APTD1608F3C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.462 ea
Line Total: USD 0.46 
Availability - 3638
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3638
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.2838
100 : USD 0.1639
1000 : USD 0.143

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Illumination Color
Brand
Lens Shape
Viewing Angle
Product Type
Factory Pack Quantity :
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APTD1608F3C from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APTD1608F3C and other electronic components in the Infrared Emitters category and beyond.

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APTD1608F3C 1.6 x 0.8 mm Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS z F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES z 1.6 mm x 0.8 mm SMD LED, 0.95 mm thickness z Low power consumption z Mechanically and spectrally matched to phototransistor z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared Illumination for cameras z Machine vision systems z Surveillance systems z Industrial electronics z IR data transmission z Remote control RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.15(0.006 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE 2 1 Po (mW/sr) 20mA Viewing A ngle Emitting Color Part Number Lens Type (Material) Min. Typ. 2 1/2 2 5 APTD1608F3C Infrared (GaAs) Water Clear 120 *1.2 *3 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. * Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAL3875 / 1203011722 Rev No: V.5A Date: 11/28/2018 APTD1608F3C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 20mA Infrared 940 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm = 20mA I F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 20mA V Infrared 1.2 1.6 V F F Reverse Current (V = 5V) I Infrared - 10 uA R R Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 90 mW D Reverse Voltage V 5 V R Junction Temperature T 115 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 50 mA F 1 Peak Forward Current I 1200 mA FM Electrostatic Discharge Threshold (HBM) 8000 V - Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAL3875 / 1203011722 Rev No: V.5A Date: 11/28/2018

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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