X-On Electronics has gained recognition as a prominent supplier of APTR3216P3BT Phototransistors across the USA, India, Europe, Australia, and various other global locations. APTR3216P3BT Phototransistors are a product manufactured by Kingbright. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

APTR3216P3BT Kingbright

APTR3216P3BT electronic component of Kingbright
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Part No.APTR3216P3BT
Manufacturer: Kingbright
Category: Phototransistors
Description: Phototransistors 3.2x1.6mm PHOTOTRANSISTOR
Datasheet: APTR3216P3BT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.462 ea
Line Total: USD 0.46 
Availability - 3777
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3777
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.2805
100 : USD 0.1639
1000 : USD 0.1287
2000 : USD 0.1133
10000 : USD 0.0979

   
Manufacturer
Product Category
Product
Package / Case
Maximum On-State Collector Current
Mounting Style
Operating Supply Voltage
Collector- Emitter Voltage VCEO Max
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Dark Current
Rise Time
Fall Time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APTR3216P3BT from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APTR3216P3BT and other electronic components in the Phototransistors category and beyond.

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APTR3216P3BT Phototransistor DESCRIPTION PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES 3.2 mm x 1.6 mm SMD LED,1.05 mm thickness Mechanically and spectrally matched to the infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.2(0.008 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at(or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAM2250 / 1203004760 Rev No: V.3 Date: 12/25/2018 APTR3216P3BT ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100A C Collector-to-Emitter Breakdown Voltage V 30 - - V 2 BR CEO Ee = 0mW/cm I = 100A E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 Ee = 0mW/cm I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V 2 CE (SAT) Ee = 20mW/cm V = 10V CE Collector Dark Current I - - 100 nA CEO 2 Ee = 0mW/cm Rise Time(10% to 90%) T - 15 - S R V = 5V CE I = 1mA C R = 1000 L Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.1 0.3 - mA Ee = 1mW/cm (ON ) = 940nm Range of spectral bandwidth 670 - 1070 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p Angle of half sensitivity 2 1/2 - 140 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% 75 -75 0% 600 700 800 900 1000 1100 1200 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAM2250 / 1203004760 Rev No: V.3 Date: 12/25/2018 Relative spectral sensitivity (a. u.) Relative sensitivity

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
KINGBRIGHT
Kingbright Company LLC
Kingbright Corp
Kingbright Corporation
KINGBRIGHT ELECTRONIC
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