CC25-12YWA 6.2 mm (0.25 inch) Four Digit Numeric Display DESCRIPTION PACKAGE DIMENSIONS The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode FEATURES 0.25 inch digit height Low current operation Excellent character appearance Easy mounting on P.C. boards or sockets Categorized for luminous intensity Mechanically rugged Standard: gray face, white segment RoHS compliant APPLICATIONS Home and smart appliances Display time and digital combination Industrial and instrumental applications Numeric status Notes: 1. All dimensions are in millimeters (inches), Tolerance is 0.25(0.01 )unless otherwise noted. 2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SELECTION GUIDE 1 Iv (ucd) 10mA Emitting Color Part Number Lens Type Description (Material) Min. Typ. 3600 6800 CC25-12YWA Yellow (GaAsP/GaP) White Diffused Common Cathode *1400 *2400 Notes: 1. Luminous intensity / luminous flux: +/-15%. * Luminous intensity value is traceable to CIE127-2007 standards. Page 1 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAP4734 / 1304000143 Rev No: V.2A Date: 02/26/2020 CC25-12YWA ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 10mA Yellow 590 - nm F peak 1 Dominant Wavelength I = 10mA Yellow 588 - nm F dom Spectral Bandwidth at 50% REL MAX Yellow 35 - nm I = 10mA F Capacitance C Yellow 20 - pF Forward Voltage I = 20mA (D7,L) 1.95 2.4 F 2 Forward Voltage I = 10mA(Dig1 8, Dig2 8 , V Yellow V F F Dig3 8 ,Dig4 8 ,D1,D2,D3,D4,D5,D6,D8) 1.95 2.4 Reverse Current (V = 5V) (Per chip) I Yellow - 10 uA R R Notes: 1. The dominant wavelength (d) above is the setup value of the sorting machine. (Tolerance d : 1nm. ) 2. Forward voltage: 0.1V. 3. Wavelength value is traceable to CIE127-2007 standards. 4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation (Per chip) P 75 mW D Reverse Voltage (Per chip) V 5 V R Junction Temperature T 110 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg Forward Voltage I = 20mA (D7,L) 60 F Forward Voltage I = 10mA(Dig1 8, Dig2 8 , I mA F F Dig3 8 ,Dig4 8 ,D1,D2,D3,D4,D5,D6,D8) 30 Peak Forward Current I = 20mA (D7,L) 280 F 1 Peak Forward Current I = 10mA(Dig1 8, Dig2 8 , I mA F FM Dig3 8 ,Dig4 8 ,D1,D2,D3,D4,D5,D6,D8) 140 Electrostatic Discharge Threshold (HBM) 8000 V - 2 Lead Solder Temperature 260C For 3-5 Seconds Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAP4734 / 1304000143 Rev No: V.2A Date: 02/26/2020