KP-3216P3C Kingbright

3.2x1.6mm PHOTOTRANSISTOR Part Number: KP-3216P3C Description Features Made with NPN silicon phototransistor chips. z 3.2mmx1.6mm SMT LED, 1.1mm thickness. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.2(0.0079 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4.The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAA4436 REV NO: V.12 DATE: SEP/04/2012 PAGE: 1 OF 4 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: D.M.Su ERP: 1203000370 Electrical / Optical Characteristics at TA=25C Symbol Parameter Min. Typ. Max. Units Test Conditions IC=100uA VBR CEO Collector-to-Emitter Breakdown Voltage 30 V Ee=0mW/c IE=100uA VBR ECO Emitter-to-Collector Breakdown Voltage 5 V Ee=0mW/c IC=2mA VCE (SAT) Collector-to-Emitter Saturation Voltage 0.8 V Ee=20mW/c VCE=10V I CEO Collector Dark Current 100 nA Ee=0mW/c TR Rise Time (10 to 90 ) 15 us VCE = 5V IC=1mA RL=1000 TF Fall Time (90 to 10 ) 15 us VCE = 5V I (ON) On State Collector Current 0.2 0.4 mA Ee=1mW/c =940nm 2 1/2 Angle of half sensitivity 120 deg Absolute Maximum Ratings at TA=25C Parameter Max.Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25C Free Air Temperature 100mW Operating Temperature -40C To +85C Storage Temperature -40C To +85C SPEC NO: DSAA4436 REV NO: V.12 DATE: SEP/04/2012 PAGE: 2 OF 4 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: D.M.Su ERP: 1203000370