56.8mm (2.3 INCH) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY Part Number: PSA23-11SRWA Super Bright Red Features Description z 2.3 inch character height. The Super Bright Red source color devices are made with z Low current operation. Gallium Aluminum Arsenide Red Light Emitting Diode. z High contrast and light output. z Easy mounting on P.C. boards or sockets. z Mechanically rugged. z Standard : gray face, white segment. z RoHS compliant. Package Dimensions& Internal Circuit Diagram Notes: 1. All dimensions are in millimeters (inches), Tolerance is 0.25(0.01 )unless otherwise noted. 2. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAN0641 REV NO: V.1A DATE: JUN/21/2013 PAGE: 1 OF 8 APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu ERP: 1311000090 Selection Guide Iv (ucd) 1 10mA Part No. Dice Lens Type Description Min. Typ. 21000 36000 Common Anode, Rt. PSA23-11SRWA Super Bright Red (GaAlAs) White Diffused Hand Decimal. *3600 *8500 Notes: 1. Luminous intensity/ luminous Flux: +/-15%. *Luminous intensity value is traceable to the CIE127-2007 compliant national standards. Electrical / Optical Characteristics at TA=25C Symbol Parameter Device Typ. Max. Units Test Conditions peak Peak Wavelength Super Bright Red 655 nm IF=20mA D 1 Dominant Wavelength Super Bright Red 640 nm IF=20mA Spectral Line Half-width Super Bright Red 20 nm IF=20mA 1/2 C Capacitance Super Bright Red 45 pF VF=0V f=1MHz A1,A2,D1,D2,P,K 3.7 5.0 VF 2 Forward Voltage Super Bright Red V IF=20mA B,C,E,F,G,H,J,L,M,N DP 1.85 2.5 A1,A2,D1,D2,P,K 10 VR = 5V Reverse Current IR B,C,E,F,G,H,J,L,M,N Super Bright Red 20 uA VR = 5V (Per chip) 10 VR = 5V DP Notes: 1. Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V. 3.Wavelength value is traceable to the CIE127-2007 compliant national standards. Absolute Maximum Ratings at TA=25C Parameter Super Bright Red Units A1,A2,D1,D2,P,K 150 Power dissipation B,C,E,F,G,H,J,L,M,N 300 mW 75 DP A1,A2,D1,D2,P,K 30 DC Forward Current B,C,E,F,G,H,J,L,M,N 60 mA 30 DP A1,A2,D1,D2,P,K 155 Peak Forward Current 1 B,C,E,F,G,H,J,L,M,N 310 mA 155 DP A1,A2,D1,D2,P,K 5 Reverse Voltage 5 V B,C,E,F,G,H,J,L,M,N (Per chip) 5 DP Operating / Storage Temperature -40C To +85C Lead Solder Temperature 2 260C For 3-5 Seconds Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. SPEC NO: DSAN0641 REV NO: V.1A DATE: JUN/21/2013 PAGE: 2 OF 8 APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu ERP: 1311000090