WP3DP3BT/BD-P22 Kingbright

WP3DP3BT/BD-P22 Phototransistor DESCRIPTION PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES Mechanically and spectrally matched to the infrared emitting LED lamp Black diffused lens Daylight filter RoHS compliant APPLICATIONS Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at (or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Lead Soldering Temperature(>5mm for 5sec) 260 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAO8749 / 1101012302 Rev No: V.5 Date: 07/19/2021 ConfidentialWP3DP3BT/BD-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100A C Collector-to-Emitter Breakdown Voltage V 30 - - V BR CEO 2 E = 0mW/cm e I = 100A E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 E = 0mW/cm e I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V CE (SAT) 2 E = 20mW/cm e V = 10V CE Collector Dark Current I - - 100 nA 2 CEO E = 0mW/cm e Rise Time(10% to 90%) T - 15 - S R V = 5V CE I = 1mA C R = 1000 L Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.3 0.8 - mA E = 1mW/cm (ON) e = 940nm Range of spectral bandwidth 670 - 1070 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p 21/2 Angle of half sensitivity - 50 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 0 100% -15 15 T = 25 C a T = 25 C -30 30 a 80% -45 45 60% 60 -60 40% 20% -75 75 0% 600 700 800 900 1000 1100 1200 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 PHOTOTRANSISTOR Collector Current vs. Collector Current vs. Relative Collector Current vs. Irradiance Collector-Emitter Voltage Ambient Temperature 10 0.3 160 VCE=5V VCE=5V T = 25 C a 140 2 0.25 Ee=1mW/cm T = 25 C a 120 1 0.2 100 2 Ee = 1mW/cm 0.15 80 60 0.1 0.1 2 Ee = 0.5mW/cm 40 0.05 2 20 Ee = 0.25mW/cm 0.01 0 0 0.01 0.1 1 10 0 1 2 3 4 5 0 20 40 60 80 100 2 Collector-emitter voltage VCE (V) Irradiance Ee (mW/cm ) Ambient temperature (C) Page 2 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAO8749 / 1101012302 Rev No: V.5 Date: 07/19/2021 Confidential Relative spectral sensitivity (a. u.) Collector current Ic (mA) Collector current (mA) Relative sensitivity Relative collector current (%)