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X-On Electronics has gained recognition as a prominent supplier of WP710A10SF4BT-P22 Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. WP710A10SF4BT-P22 Infrared Emitters are a product manufactured by Kingbright. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

WP710A10SF4BT-P22 Kingbright

WP710A10SF4BT-P22 electronic component of Kingbright
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See Product Specifications
Part No.WP710A10SF4BT-P22
Manufacturer: Kingbright
Category: Infrared Emitters
Description: Infrared Emitters 3mm INFRARED LED
Datasheet: WP710A10SF4BT-P22 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7176 ea
Line Total: USD 0.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 15
Multiples : 1
15 : USD 0.3964
100 : USD 0.3336
500 : USD 0.3063
1000 : USD 0.2846
2000 : USD 0.2595
10000 : USD 0.2574

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Illumination Color
Brand
Lens Shape
Viewing Angle
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the WP710A10SF4BT-P22 from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WP710A10SF4BT-P22 and other electronic components in the Infrared Emitters category and beyond.

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WP710A10SF4BT-P22 T-1 (3mm) Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes FEATURES Mechanically and spectrally matched to the Phototransistor Blue transparent lens RoHS compliant APPLICATIONS Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SELECTION GUIDE 2 1 Po (mW/sr) 20mA Viewing Angle Emitting Color Part Number Lens Type (Material) Min. Typ. 21/2 WP710A10SF4BT-P22 Infrared (GaAlAs) Blue Transparent 7 12 30 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAO8743 / 1101031108 Rev No: V.5B Date: 05/29/2020 ConfidentialWP710A10SF4BT-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 20mA Infrared 880 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 20mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 20mA V Infrared 1.3 1.6 V F F Reverse Current (V = 5V) I Infrared - 10 A R R Temperature Coefficient of Wavelength TC Infrared 0.3 - nm/C I = 20mA, -10C T 85C F Temperature Coefficient of V F TC Infrared -1.3 - mV/C V I = 20mA, -10C T 85C F Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 85 mW D Reverse Voltage V 5 V R Junction Temperature T 125 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 50 mA F 1 Peak Forward Current I 1.2 A FM Electrostatic Discharge Threshold (HBM) 8000 V - 2 Thermal Resistance (Junction / Ambient) R 530 C/W th JA 2 Thermal Resistance (Junction / Solder point) R 310 C/W th JS 3 Lead Solder Temperature 260C For 3 Seconds 4 Lead Solder Temperature 260C For 5 Seconds Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2 2. R ,R Results from mounting on PC board FR4 (pad size 16 mm per pad). th JA th JS 3. 2mm below package base. 4. 5mm below package base. 5. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 5 2020 Kingbright. All Rights Reserved. Spec No: DSAO8743 / 1101031108 Rev No: V.5B Date: 05/29/2020 Confidential

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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