WP7113P3BT Kingbright

WP7113P3BT Phototransistor DESCRIPTION PACKAGE DIMENSIONS z Made with NPN silicon phototransistor chips FEATURES z Mechanically and spectrally matched to the infrared emitting LED lamp z Blue transparent lens z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at (or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Lead Soldering Temperature(>5mm for 5sec) 260 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2017 Kingbright. All Rights Reserved. Spec No: DSAF6773 / 1101005146 Rev No: V.8 Date: 12/27/2017 WP7113P3BT ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100uA C Collector-to-Emitter Breakdown Voltage V 30 - - V BR CEO 2 Ee = 0mW/cm I = 100uA E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 Ee = 0mW/cm I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V CE (SAT) 2 Ee = 20mW/cm V = 10V CE Collector Dark Current I - - 100 nA 2 CEO Ee = 0mW/cm Rise Time(10% to 90%) T - 15 - S R V = 5V CE IC = 1mA RL = 1000 Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.7 3 - mA Ee = 1mW/cm (ON) = 940nm Range of spectral bandwidth 670 - 1070 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p 2 1/2 Angle of half sensitivity - 20 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 60 -60 40% 20% 75 -75 0% 600 700 800 900 1000 1100 1200 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 PHOTOTRANSISTOR Relative Collector Current vs. Collector Current vs. Collector Current vs. Ambient Temperature Irradiance Collector-Emitter Voltage 160 100 5 VCE=5V VCE=5V T = 25 C 140 2 a Ee=1mW/cm T = 25 C a 4 120 10 100 3 2 80 1 Ee = 1mW/cm 2 60 40 0.1 2 1 Ee = 0.5mW/cm 20 2 Ee = 0.25mW/cm 0 0.01 0 0 20406080 100 0.01 0.1 1 10 01 234 5 2 Ambient temperature (C) CE Irradiance Ee (mW/cm ) Collector-emitter voltage V (V) Page 2 / 4 2017 Kingbright. All Rights Reserved. Spec No: DSAF6773 / 1101005146 Rev No: V.8 Date: 12/27/2017 Relative spectral sensitivity (a. u.) Collector current Ic (mA) Collector current (mA) Relative sensitivity Relative collector current (%)