C0G (NP0) Dielectric
General Specifications
C0G (NP0) is the most popular formulation of the
temperature-compensating, EIA Class I ceramic
materials. Modern C0G (NP0) formulations contain
neodymium, samarium and other rare earth oxides.
C0G (NP0) ceramics offer one of the most stable capacitor
dielectrics available. Capacitance change with temperature
is 0 30ppm/C which is less than 0.3% C from -55C
to +125C. Capacitance drift or hysteresis for C0G (NP0)
ceramics is negligible at less than 0.05% versus up to
2% for films. Typical capacitance change with life is less
than 0.1% for C0G (NP0), one-fifth that shown by most
other dielectrics. C0G (NP0) formulations show no aging
characteristics.
PART NUMBER (see page 2 for complete part number explanation)
0805 A 101 J A T 2 A
5
Size Dielectric Capacitance Capacitance Failure Terminations Packaging Special
Voltage
( x ) C0G (NP0) = A Code (In pF) Tolerance Rate 2 = 7" Reel Code
6.3V = 6 T = Plated Ni
B = .10 pF (<10pF) A = Not 4 = 13" Reel A = Std.
10V = Z 2 Sig. Digits +
and Sn
C = .25 pF (<10pF) Applicable 7 = Bulk Cass. Product
16V = Y
Number of
7 = Gold Plated
D = .50 pF (<10pF) 9 = Bulk
25V = 3
Zeros
F = 1% ( 10 pF)
50V = 5
Contact
G = 2% ( 10 pF)
100V = 1 Contact
Factory For
J = 5%
200V = 2 Factory
1 = Pd/Ag Term
K = 10%
500V = 7 For
Multiples
NOTE: Contact factory for availability of Termination and Tolerance Options for Specific Part Numbers.
Contact factory for non-specified capacitance values.
Temperature Coefficient
Capacitance vs. Frequency Insulation Resistance vs Temperature
10,000
+2
Typical Capacitance Change
Envelope: 0 30 ppm/C
+1
1,000
+0.5
0
0
-1
100
-0.5
-2
0
1KHz
-55 -35 -15 +5 +25 +45 +65 +85 +105 +125 10 KHz 100 KHz 1 MHz 10 MHz
0 20 40 60 80 100
Frequency
Temperature C Temperature C
Variation of Impedance with Cap Value
Variation of Impedance with Ceramic Formulation
Variation of Impedance with Chip Size
Impedance vs. Frequency
Impedance vs. Frequency Impedance vs. Frequency
0805 - C0G (NP0)
1000 pF - C0G (NP0) 1000 pF - C0G (NP0) vs X7R
10 pF vs. 100 pF vs. 1000 pF
0805
100,000
10
10.00
1206
X7R
10,000 0805
NPO
1812
1210
1,000
1.00
1.0
100
0.10
10 pF
10.0
0.1
1.0
100 1000
100 pF 10 0.01
10 100 1000
1000 pF
Frequency, MHz
0.1
1 10 100 1000 Frequency, MHz
Frequency, MHz
4
% Capacitance
Impedance,
% Capacitance
Impedance,
Insulation Resistance (Ohm-Farads)
Impedance, C0G (NP0) Dielectric
Specifications and Test Methods
Parameter/Test NP0 Specification Limits Measuring Conditions
Operating Temperature Range -55C to +125C Temperature Cycle Chamber
Capacitance Within specified tolerance Freq.: 1.0 MHz 10% for cap 1000 pF
<30 pF: Q 400+20 x Cap Value 1.0 kHz 10% for cap > 1000 pF
Q
30 pF: Q 1000 Voltage: 1.0Vrms .2V
100,000M or 1000M - F, Charge device with rated voltage for
Insulation Resistance
whichever is less 60 5 secs @ room temp/humidity
Charge device with 300% of rated voltage for
Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
Note: Charge device with 150% of rated
voltage for 500V devices.
Appearance No defects Deflection: 2mm
Capacitance Test Time: 30 seconds
5% or .5 pF, whichever is greater
Resistance to Variation
1mm/sec
Flexure
Q Meets Initial Values (As Above)
Stresses
Insulation
Initial Value x 0.3
90 mm
Resistance
95% of each terminal should be covered Dip device in eutectic solder at 230 5C
Solderability
with fresh solder for 5.0 0.5 seconds
Appearance No defects, <25% leaching of either end terminal
Capacitance
2.5% or .25 pF, whichever is greater
Variation
Dip device in eutectic solder at 260C for 60
seconds. Store at room temperature for 24 2
Resistance to Q Meets Initial Values (As Above)
Solder Heat hours before measuring electrical properties.
Insulation
Meets Initial Values (As Above)
Resistance
Dielectric
Meets Initial Values (As Above)
Strength
Appearance No visual defects Step 1: -55C 2 30 3 minutes
Capacitance
2.5% or .25 pF, whichever is greater Step 2: Room Temp 3 minutes
Variation
Thermal
Q Meets Initial Values (As Above) Step 3: +125C 2 30 3 minutes
Shock
Insulation
Meets Initial Values (As Above) Step 4: Room Temp 3 minutes
Resistance
Dielectric Repeat for 5 cycles and measure after
Meets Initial Values (As Above)
Strength 24 hours at room temperature
Appearance No visual defects
Capacitance
3.0% or .3 pF, whichever is greater
Variation Charge device with twice rated voltage in
30 pF: Q 350 test chamber set at 125C 2C
Q
Load Life 10 pF, <30 pF: Q 275 +5C/2 for 1000 hours (+48, -0).
(C=Nominal Cap)
<10 pF: Q 200 +10C
Insulation Remove from test chamber and stabilize at
Initial Value x 0.3 (See Above)
Resistance room temperature for 24 hours
Dielectric before measuring.
Meets Initial Values (As Above)
Strength
Appearance No visual defects
Capacitance
5.0% or .5 pF, whichever is greater
Variation Store in a test chamber set at 85C 2C/
30 pF: Q 350 85% 5% relative humidity for 1000 hours
Load Q 10 pF, <30 pF: Q 275 +5C/2 (+48, -0) with rated voltage applied.
Humidity <10 pF: Q 200 +10C
Insulation Remove from chamber and stabilize at
Initial Value x 0.3 (See Above)
Resistance room temperature for 24 2 hours
Dielectric before measuring.
Meets Initial Values (As Above)
Strength
5