C0G (NP0) Dielectric General Specifications C0G (NP0) is the most popular formulation of the temperature-compensating, EIA Class I ceramic materials. Modern C0G (NP0) formulations contain neodymium, samarium and other rare earth oxides. C0G (NP0) ceramics offer one of the most stable capacitor dielectrics available. Capacitance change with temperature is 0 30ppm/C which is less than 0.3% C from -55C to +125C. Capacitance drift or hysteresis for C0G (NP0) ceramics is negligible at less than 0.05% versus up to 2% for films. Typical capacitance change with life is less than 0.1% for C0G (NP0), one-fifth that shown by most other dielectrics. C0G (NP0) formulations show no aging characteristics. PART NUMBER (see page 2 for complete part number explanation) 0805 A 101 J A T 2 A 5 Packaging Dielectric Capacitance Capacitance Terminations Special Size Voltage Failure 2 = 7 Reel C0G (NP0) = A Code (In pF) Tolerance Code (L x W) 6.3V = 6 T = Plated Ni Rate 4 = 13 Reel 10V = Z B = .10 pF (<10pF) A = Std. 2 Sig. Digits + and Sn A = Not U = 4mm TR 16V = Y C = .25 pF (<10pF) Product Number of Zeros (01005) Applicable 25V = 3 D = .50 pF (<10pF) Contact 50V = 5 F = 1% ( 10 pF) Factory For 100V = 1 G = 2% ( 10 pF) 1 = Pd/Ag Term 200V = 2 J = 5% 7 = Gold Plated 500V = 7 K = 10% Contact Factory NOT RoHS For Multiples COMPLIANT NOTE: Contact factory for availability of Termination and Tolerance Options for Specific Part Numbers. Contact factory for non-specified capacitance values. 44 051818 C0G (NP0) Dielectric C0G (NP0) Dielectric Specifications and Test Methods Specicfi ations and Test Methods Parameter/Test NP0 Specification Limits Measuring Conditions Parameter/Test NP0 Specification Limits Measuring Conditions Temperature Cycle Chamber Operating Temperature Range -55C to +125C Operating Temperature Range -55C to +125C Temperature Cycle Chamber Capacitance Within specified tolerance Freq.: 1.0 MHz 10% for cap 1000 pF Capacitance Within specified tolerance Freq.: 1.0 MHz 10% for cap 1000 pF 1.0 kHz 10% for cap > 1000 pF <30 pF: Q 400+20 x Cap Value <30 pF: Q 400+20 x Cap Value 1.0 kHz 10% for cap > 1000 pF Q Q Voltage: 1.0Vrms .2V 30 pF: Q 1000 30 pF: Q 1000 Voltage: 1.0Vrms .2V Charge device with rated voltage for 100,000M or 1000M - F100,000M or 1000M - F, , Charge device with rated voltage for Insulation Resistance Insulation Resistance 60 5 secs room temp/humidity whichever is less whichever is less 60 5 secs room temp/humidity Charge device with 250% of rated voltage for Charge device with 250% of rated voltage for Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current limited to 50 mA (max) limited to 50 mA (max) Note: Charge device with 150% of rated Note: Charge device with 150% of rated voltage for 500V devices. voltage for 500V devices. Deflection: 2mm Appearance No defects Appearance No defects Deflection: 2mm Test Time: 30 seconds CapacitanceCapacitance Test Time: 30 seconds 5% or .5 pF, whichever is greater 5% or .5 pF, whichever is greater Resistance to VariationVariation Resistance to FlexureFlexure Q Meets Initial Values (As Above) Q Meets Initial Values (As Above) StressesStresses Insulation Insulation Initial Value x 0.3 Initial Value x 0.3 Resistance Resistance 95% of each terminal should be covered Dip device in eutectic solder at 230 5C Solderability with fresh solder Dip device in eutectic solder at 230 5Cfor 5.0 0.5 seconds 95% of each terminal should be covered Solderability Appearance No defects, <25% leaching of either end terminal for 5.0 0.5 seconds with fresh solder Capacitance Appearance No defects, <25% leaching of either end terminal 2.5% or .25 pF, whichever is greater Variation Capacitance Dip device in eutectic solder at 260C for 60 2.5% or .25 pF, whichever is greater Variation seconds. Store at room temperature for 24 2 Resistance to Q Meets Initial Values (As Above) Dip device in eutectic solder at 260C for 60sec- Resistance toSolder Heat hours before measuring electrical properties. Q Meets Initial Values (As Above) Insulation onds. Store at room temperature for 24 2hours Solder Heat Meets Initial Values (As Above) Resistance Insulation before measuring electrical properties. Meets Initial Values (As Above) Dielectric Resistance Meets Initial Values (As Above) Strength Dielectric Meets Initial Values (As Above) Appearance No visual defects Step 1: -55C 2 30 3 minutes Strength Capacitance Appearance No visual defects Step 1: -55C 2 30 3 minutes 2.5% or .25 pF, whichever is greater Step 2: Room Temp 3 minutes Variation Capacitance 2.5% or .25 pF, whichever is greater Step 2: Room Temp 3 minutes Variation Thermal Q Meets Initial Values (As Above) Step 3: +125C 2 30 3 minutes ThermalShock Q Meets Initial Values (As Above) Step 3: +125C 2 30 3 minutes Insulation Shock Meets Initial Values (As Above) Step 4: Room Temp 3 minutes Resistance Insulation Meets Initial Values (As Above) Step 4: Room Temp 3 minutes Dielectric Repeat for 5 cycles and measure after Resistance Meets Initial Values (As Above) Strength 24 hours at room temperature Dielectric Repeat for 5 cycles and measure after Meets Initial Values (As Above) Appearance No visual defects 24 hours at room temperature Strength Capacitance Appearance No visual defects 3.0% or .3 pF, whichever is greater Variation Charge device with twice rated voltage in Capacitance 3.0% or .3 pF, whichever is greater 30 pF: Q 350 test chamber set at 125C 2C Variation Q Charge device with twice rated voltage in Load Life 10 pF, <30 pF: Q 275 +5C/2 for 1000 hours (+48, -0). (C=Nominal Cap) 30 pF: Q 350 test chamber set at 125C 2C Q <10 pF: Q 200 +10C Load Life for 1000 hours (+48, -0). 10 pF, <30 pF: Q 275 +5C/2 (C=Nominal Cap) Insulation Remove from test chamber and stabilize at <10 pF: Q 200 +10C Initial Value x 0.3 (See Above) Resistance room temperature for 24 hours Remove from test chamber and stabilize at Insulation Initial Value x 0.3 (See Above) Dielectric room temperature for 24 hoursbefore measuring. Resistance Meets Initial Values (As Above) before measuring. Strength Dielectric Meets Initial Values (As Above) Appearance No visual defects Strength Capacitance 5.0% or .5 pF, whichever is greater Appearance No visual defects Variation Store in a test chamber set at 85C 2C/ Capacitance 30 pF: Q 350 85% 5% relative humidity for 1000 hours 5.0% or .5 pF, whichever is greater Load VariationQ 10 pF, <30 pF: Q 275 +5C/2 (+48, -0) with rated voltage applied. Store in a test chamber set at 85C 2C/ Humidity <10 pF: Q 200 +10C 30 pF: Q 350 85% 5% relative humidity for 1000 hours Load Q Insulation Remove from chamber and stabilize at 10 pF, <30 pF: Q 275 +5C/2 (+48, -0) with rated voltage applied. Initial Value x 0.3 (See Above) Humidity Resistance <10 pF: Q 200 +10C room temperature for 24 2 hours Dielectric before measuring. Remove from chamber and stabilize at room Insulation Initial VMeets Initial Value x 0.3 (See alues (As Above)Above) Strength temperature for 24 2 hours before measuring. Resistance Dielectric Meets Initial Values (As Above) Strength 100917 051818 5 55