TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQxx-02HTG Series RoHS Pb GREEN AQxx-02HTG Series 500W TVS Diode Array Description The AQxx-02HTG Series TVS Diode Array is designed to protect sensitive equipment from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. This AQxx series can safely absorb repetitive ESD strikes of 30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally, the AQ05 can safely conduct a 33A 8/20 surge nd event as defined in IEC 61000-4-5 2 Edition at low voltage clamping levels. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low clamping voltage 30kV contact, 30kV air Low leakage current EFT, IEC 61000-4-4, 50A AEC-Q101 qualified (5/50ns) Moisture Sensitivity Level Lightning, 33A (8/20s as (MSL -1) 1 defined in IEC 61000-4-5 Halogen free, lead free nd 2 edition) for the AQ05 and RoHS compliant Working voltages: 5V, 3 PPAP capable 12V, 15V, 24V and 36V ESD, ISO 10605, 330pF 330, 30kV contact, 2 30kV air Applications Industrial Equipment Legacy Ports Test and Medical (RS-232, RS-485) Equipment Security and Alarm Point-of-Sale Terminals Systems Motor Controls RS-232 Application Example RS-232 Port Transceiver RD TD RTS IC CTS DSR DTR Life Support Note: AQ15 (x6) Not Intended for Use in Life Support or Life Saving Applications (bidirectional implementation) Case GND The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/17/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQxx-02HTG Series AQxx-02HTG Series Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 500 W Pk p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. AQ05 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5.0 V RWM R Breakdown Voltage V I =1mA 6.0 7.0 V BR R Reverse Leakage Current I V =5V 1.0 A LEAK R I =1A, t =8/20s, Pin 1 or Pin 2 to Pin 3 8.0 9.8 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Pin 1 or Pin 2 to Pin 3 10.5 13.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, Pin 1 or Pin 2 to Pin 3 0.19 DYN p Peak Pulse Current I t =8/20s 33 A PP p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV C Reverse Bias=0V, f=1MHz 290 350 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 145 180 pF I/O-I/O AQ12 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 12.0 V RWM R Breakdown Voltage V I =1mA 13.3 14.2 V BR R Reverse Leakage Current I V =12V 1.0 A LEAK R I =1A, t =8/20s, Pin 1 or Pin 2 to Pin 3 16.0 18.5 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, Pin 1 or Pin 2 to Pin 3 20.0 22.5 V PP p 2 Dynamic Resistance R TLP, t =100ns, Pin 1 or Pin 2 to Pin 3 0.25 DYN p Peak Pulse Current I t =8/20s 20 A PP p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV C Reverse Bias=0V, f=1MHz 110 135 pF I/O-GND 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 55 85 pF I/O-I/O 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/17/19