TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1003-01ETG Series RoHS Pb GREEN AQ1003-01ETG Series - 30pF 30kV Unidirectional TVS Description This TVS diode is fabricated in a proprietary silicon avalanche technology that offers each I/O pin a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust TVS diodes can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, the TVS diode can safely dissipate 7A of 8/20s surge current (IEC 61000-4-5 nd 2 Edition) with very low clamping voltages. Features ESD, IEC 61000-4-2, Fits solder footprint of Pinout 30kV contact, 30kV air industry standard 0402 (1005) components EFT, IEC 61000-4-4, 40A (5/50ns) AEC-Q101 qualified Lightning, 7A (8/20s as Halogen free, Lead free 1 defined in IEC 61000-4-5 and RoHS compliant 2nd edition) Moisture Sensitivity Low leakage current of Level(MSL -1) 100nA (MAX) at 5V ESD, ISO 10605, 330pF 330, 29kV contact, PPAP Capable 2 30kV air Small SOD882 (JEDEC MO-236) package saves board space Functional Block Diagram Applications Mobile phones Digital cameras 1 Smart phones Portable medical components PDAs Automotive applications Portable navigation components Application Example I/O porI/O portt 2 LoLow-w- speed portspeed port ControControllellerr B1B1 B2B2 B3B3 B4B4 (4) AQ1003-01ETG SignalSignal GrGrououndnd Life Support Note: Not Intended for Use in Life Support or Life Saving Applications ShieldShield The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/16/19 Outside World TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1003-01ETG Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 7.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Forward Voltage Drop V I = 10mA 0.8 1.2 V F F Breakdown Voltage V I =1mA 6.0 7.8 8.5 V BR R Reverse Standoff Voltage V I =1A 5.0 V RWM R Reverse Leakage Current I V =5V 100 nA LEAK R I =6A t =8/20s 11.4 V pp p 1 Clamp Voltage V C I =7A t =8/20s 12.0 V pp p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.25 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V f=1MHz 30 pF I/O-GND Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping Voltage vs. I PP 14.0 40.0 12.0 35.0 30.0 10.0 25.0 8.0 20.0 6.0 15.0 4.0 10.0 2.0 5.0 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 2 3 4 5 6 7 Peak Pulse Current-I (A) DC Bias (V) PP 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/16/19 Capacitance (pF) Clamp Voltage (V ) C