TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1003-01LTG Series RoHS Pb GREEN AQ1003-01LTG, 30pF 30kV Unidirectional Discrete TVS Description This discrete TVS diode is fabricated in a proprietary silicon avalanche technology that protects electronic equipment I/O pins from destructive electrostatic discharges (ESDs). These robust TVSs can withstand repetitive contact or air ESD discharge events at 30 kV levels without suffering any performance degradation. This exceeds the ESD contact and air discharge test requirements of IEC 61000- 4-2. Additionally, the TVS can withstand an 8/20 surge nd current event as defined in IEC 61000-4-5 2 Edition up to 7A and still provide low voltage clamping levels. Pinout Features ESD, IEC 61000-4-2, PPAP capable Pin 1 30kV contact, 30kV air AEC-Q101 qualified EFT, IEC 61000-4-4, 40A Moisture Sensitivity Level (5/50ns) (MSL -1) Lightning, 7A (8/20s as Halogen free, Lead free defined in IEC 61000-4-5 and RoHS compliant nd 2 Edition) ESD, ISO 10605, 330pF Low leakage current of 330, 25kV contact, 100nA (MAX) at 5V 30kV air Pin 2 Functional Block Diagram Applications Mobile phones Digital cameras 1 Smart phones Portable medical components PDAs Automotive applications Portable navigation components Application Example 2 I/O porI/O portt LoLow-w- speed portspeed port ControControllellerr B1B1 B2B2 B3B3 B4B4 (4) AQ1003-01LTG SignalSignal GrGrououndnd Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/16/19 Outside World TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1003-01LAQ1003-01LTG TG Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 7.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at conditions above the ratings indicated in this absolute maximum ratings section or in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5.0 V RWM R Breakdown Voltage V I =1mA 6.0 7.0 8.5 V BR R Reverse Leakage Current I V =5V 100 nA LEAK R I =1A t =8/20s, I/O to GND 8.5 11 V pp p 1 Clamp Voltage V C I =7A t =8/20s, I/O to GND 11.5 14 V pp p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.23 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 30 35 pF I/O-GND Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping Voltage vs. I for 8/20s waveshape PP 14 40 35 12 30 10 25 8 20 6 15 4 10 2 5 0 0 123456 7 012345 Peak Pulse Current-I (A) PP Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/16/19 Capacitance (pF) Clamp Voltage (V ) C