TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - AQ1005 Series RoHS Pb GREEN AQ1005 Series 30pF 30kV Bidirectional Discrete TVS Description The AQ1005 TVS includes back-to-back breakdown diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, 8 kV contact discharge and 15 kV air discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 30kV contact, 30kV air 0.1A at 5V 1 ESD, ISO 10605, 330pF SOD882 footprint 330, 30kV contact, compatible to 0402 30kV air footprint 2 EFT, IEC 61000-4-4, 40A AEC-Q101 qualified (5/50ns) Halogen free, Lead free Lightning, 8A (8/20 as and RoHS compliant defined in IEC 61000-4-5 PPAP capable nd 2 edition) Low capacitance of 30pF ( V =0V) R Functional Block Diagram Applications Mobile Phones Portable Navigation Components Smart Phones 1 2 Tablets Camcorders Point of Sale Terminals Portable Medical Automotive Applications Digital Cameras MP3/PMP Application Example Keypad s I/O Controller P1 P2 Outside P3 IC World P4 SP1005 (x4) (4)AQ1005 GND GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.11/06/20 TVS Diode Arrays (SPA Diodes) General Purpose ESD Protection - AQ1005 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 8.0 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A - - 6.0 V RWM R Breakdown Voltage V I =1mA - 8.5 9.5 V BR R Reverse Leakage Current I V =5V - 0.1 0.5 A LEAK R I =1A, t =8/20s, I/O to I/O - 9.3 - V PP p 1 Clamp Voltage V C I =2A, t =8/20s, I/O to I/O - 10.0 - V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O - 0.25 - DYN P IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV Reverse Bias=0V f=1MHz - 30 - pF 1 Diode Capacitance C I/O-I/O Reverse Bias=2.5V f=1MHz - 23 - pF Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias 8/20s Pulse Waveform 110% 40.0 100% 35.0 90% 30.0 80% 25.0 70% 60% 20.0 50% 15.0 40% 10.0 30% 20% 5.0 10% 0.0 0% 0.0 0.5 1.01.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Bias Voltage (V) Time (s) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.11/06/20 Capacitance (pF) Percent of I PP