TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1006 Series RoHS Pb GREEN AQ1006 Series 25pF 30kV Unidirectional Discrete TVS Description This TVS protects each I/O pin from destructive electrostatic discharges (ESD). This robust TVS can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each TVS can safely dissipate 8/20s 5A surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages. Pinout Features ESD, IEC 61000-4-2, Space efficient 0201 30kV contact, 30kV air footprint) EFT, IEC 61000-4-4, 40A AEC-Q101 qualified Pin 1 Pin 2 (5/50ns) Halogen free, lead free Lightning, IEC 61000-4-5 and RoHS compliant nd 2 edition, 5A (8/20s) Moisture Sensitivity Low leakage current of Level(MSL -1) 0.5A (MAX) at 5V PPAP Capable ESD, ISO 10605, 330pF 330, 25kV contact, 30kV air Functional Block Diagram Applications Mobile phones Portable navigation components 1 2 Smart phones Portable medical PDAs components Digital cameras Automotive applications Application Example Keypads I/O Controller P1 P2 P3 IC Outside World P4 AQ1006(X4) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/26/18 1 2 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1006 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 5 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 6.0 V RWM R Breakdown Voltage V I =1mA 7.8 V BR R Forward Voltage Drop V I =1mA 0.8 V F F Reverse Leakage Current I V =5V 0.1 0.5 A LEAK R I =1A, t =8/20s 8.3 V pp p 1 Clamp Voltage V C I =2A, t =8/20s 9.2 V pp p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.9 DYN p IEC 61000-4-2 (Contact Discharge) 30 0.21 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V, f=1MHz 25 pF 1 Diode Capacitance C I/O-GND Reverse Bias=2.5V, f=1MHz 15 pF 1 Note: Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns IEC 6100042 +8 kV Contact ESD Clamping Voltage IEC 6100042 -8 kV Contact ESD Clamping Voltage 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/26/18