TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1026 Series RoHS Pb GREEN AQ1026 Series 15pF 30kV Bidirectional Discrete TVS Description The AQ1026 back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The AQ1026 TVS can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 5A of 8/20s nd surge current (IEC 61000-4-5 2 edition) with very low clamping voltages. Features ESD, IEC 61000-4-2, Space efficient 0201 Pinout 30kV contact, 30kV air footprint) EFT, IEC 61000-4-4, 40A AEC-Q101 qualified (5/50ns) Halogen free, lead free Lightning, IEC 61000-4-5 and RoHS compliant Pin 1 Pin 2 nd 2 edition, 5A (8/20s) Moisture Sensitivity Low leakage current of Level(MSL -1) 0.5A (MAX) at 5V PPAP Capable ESD, ISO 10605, 330pF 330, 25kV contact, 30kV air Functional Block Diagram Applications Mobile phones Portable navigation components Smart phones 1 Portable medical Smart watches components Tablets Automotive applications Application Example Keypads I/O Controller 2 P1 P2 Outside P3 IC World P4 SP1026 (x4) Case GND AQ1026(X4) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/27/18 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - AQ1026 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 5 A PP p T Operating Temperature -40 to 150 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 6.0 V RWM R Breakdown Voltage V I =1mA 7.8 V BR R Reverse Leakage Current I V =5V 0.1 0.5 A LEAK R I =1A, t =8/20s 12.0 V pp p 1 Clamp Voltage V C I =2A, t =8/20s 13.4 V pp p 2 Dynamic Resistance R (V - V ) / (I - I ) 0.4 DYN C2 C1 PP2 PP1 IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V, f=1MHz 15 pF 1 Diode Capacitance C I/O-I/O Reverse Bias=2.5V, f=1MHzz 12 pF 1 Note: Parameter is guaranteed by design and/or component characterization 2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns IEC 6100042 +8 kV Contact ESD Clamping Voltage IEC 6100042 -8 kV Contact ESD Clamping Voltage 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/27/18